公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2019 | Comparison of microstructures and magnetic properties in FePt alloy films deposited by direct current magnetron sputtering and high power impulse magnetron sputtering | Yang, W.-S.; Sun, T.-H.; Chen, S.-C.; Jen, S.-U.; Guo, H.-J.; Liao, M.-H.; Chen, J.-R.; MING-HAN LIAO | Journal of Alloys and Compounds | | | |
2016 | Comprehensive investigation on array-type dummy active diffused region and gate geometries using narrow NMOSFETs with SiC S/D stressors | Lee, Chang Chun; Cheng, Sen Wen; Hsieh, Chia Ping; Liao, Ming Han; Guo, Yu Huan; MING-HAN LIAO | International Journal of Nanotechnology | | | |
2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs M-I-S contact system with different inserted insulators | Liao, M.-H.; Lien, C.; MING-HAN LIAO | AIP Advances | | | |
2015 | The comprehensive study and the reduction of contact resistivity on the n-InGaAs MIS contact system with different inserted insulators | M. H.Liao ; C. Lien | AIP Advances | | | |
2009 | The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics | Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | | | |
2013 | CVD chamber design to improve deposition quality in both 300- and 450- mm wafers with 3D-chamber modeling and experimental visual technique | M. H.Liao ; C.-H. Chen; S.-C. Kao; M.-C. Huang | e-Manufacturing & Design Collaboration Symposium | | | |
2020 | The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System | Liao, M.-H.; Huang, K.-C.; Su, W.-J.; Chen, S.-C.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU | IEEE Transactions on Electron Devices | | 1 | |
2015 | The demonstration of a D-SMT stressor on Ge planer n-MOSFETs | M. H.Liao ; P.-G. Chen | AIP Advances | | | |
2013 | The demonstration of a highly efficient SiGe Type-II hetero-junction solar cell with an optimal stress design | MING-HAN LIAO | Thin Solid Films | 5 | 5 | |
2020 | The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs | Lu P.-Y; Yen C.-M; Chang S.-Y; Feng Y.-J; Lien C; Hu C.-W; Yao C.-W; Lee M.-H; Liao M.-H.; MING-HAN LIAO | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2020 | The demonstration of carbon nanotubes (CNTs) as flip-chip connections in 3-D integrated circuits with an ultralow connection resistance | Liao, M.-H.; Lu, P.-Y.; Su, W.-J.; Chen, S.-C.; Hung, H.-T.; Kao, C.-R.; Pu, W.-C.; Chen, C.-C.A.; Lee, M.-H.; MING-HAN LIAO ; WEI-JIUN SU ; C. ROBERT KAO | IEEE Transactions on Electron Devices | | 6 | |
2014 | The demonstration of colossal magneto-capacitance and 'negative' capacitance effect with the promising characteristics of Jg-EOT and transistor's performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | Liao, M.-H. ; Huang, S.C.; Liu, C.Y.; Chen, P.G.; Kao, S.C.; Lien, C. | Symposium on VLSI Technology | 4 | 0 | |
2014 | The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design | M.-H. Liao; S. C. Huang; C. Y. Liu; P. G. Chen; S. C. Kao; C. Lien; MING-HAN LIAO | 2014 Symposium on VLSI Technology (VLSI-technology) | | | |
2014 | The demonstration of colossal magneto-capacitance effect with the promising gate stack characteristics on Ge (100) by the magnetic gate stack design | M. H.Liao ; S.-C. Huang | Applied Physics Letters | | | |
2014 | The demonstration of D-SMT stressor on Si and Ge n-FinFETs | Liao, M.-H. ; Chen, P.G.; Huang, S.C.; Kao, S.C.; Hung, C.X.; Liu, K.H.; Lien, C.; Liu, C.Y. | Symposium on VLSI Technology | 6 | 0 | |
2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
2018 | The demonstration of high-performance multilayer BaTiO <inf>3</inf> /BiFeO <inf>3</inf> stack MIM capacitors | Lien, C.; Hsieh, C.-F.; Wu, H.-S.; Wu, T.-C.; Wei, S.-J.; Chu, Y.-H.; Liao, M.-H. ; Lee, M.-H. | IEEE Transactions on Electron Devices | 9 | 9 | |
2018 | The Demonstration of High-Performance Multilayer BaTiO3/BiFeO3 Stack MIM Capacitors | C. Lien; C.-F. Hsieh; H.-S. Wu; T.-C. Wu; S.-J. Wei; Y.-H. Chu; M.-H. Liao; M.-H. Lee; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
2022 | The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology | Yen C; Chang S; Chen K; Feng Y; Chen L; Liao B; Lee M; Chen S; Liao M.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | | |
2022 | The demonstration of low-temperature (350 °C) grown carbon nano-tubes for the applications of through silicon via in 3D stacking and power-via | HSIN-YI LIN; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | Applied Physics Letters | 3 | 3 | |