公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2017 | In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics | M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee | Solid State Electronics | | | |
2017 | In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Lee, M.H; Tang, M.; Chen, P.-G.; MING-HAN LIAO | Solid-State Electronics | | | |
2019 | Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering | Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO | Coatings | | | |
2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU | Applied Physics Letters | 29 | 31 | |
2006 | Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes | M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | | | |
2007 | The intermixing and strain effects on electroluminescence of SiGe dots | MING-HAN LIAO ; Lee, C.-H.; Hung, T. A.; CHEE-WEE LIU | Journal of Applied Physics | 29 | 29 | |
2009 | An investigation about the limitation of strained-Si technology | Liao, M.H.; Yeh, L.; Lu, J.C.; Yu, M.H.; Wang, L.T.; Wu, J.; Jeng, P.-R.; Lee, T.-L.; Jang, S.; MING-HAN LIAO | International Symposium on VLSI Technology, Systems, and Applications | | | |
2020 | The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors | Lien, C.; Hsieh, C.-F.; Wu, T.-C.; Yang, C.-S.; Lee, M.-H.; Xu, J.-J.; Hu, C.-W.; Huang, C.; Chang, S.-Z.; Liao, M.-H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | | 3 | |
2022 | The Investigation of Electrical Characteristics for Carbon Nano-Tubes as Through Silicon Via in Multi-Layer Stacking Scheme With an Optimized Structure | Chen, K. C.; Basu, Nilabh; Chen, S. C.; Lee, M. H.; MING-HAN LIAO | IEEE Transactions on Electron Devices | 4 | 5 | |
2011 | The investigation of optimal Si-sige hetero-structure thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H.; Chen, C.H.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | | | |
2010 | The investigation of optimal Si-Sigh hetero-stucture thin-film solar cell with theoretical calculation and quantitative analysis | Liao, M.H. ; Ho, W.S.; Chen, Y.-Y.; Chang, S.T. | IEEE Photovoltaic Specialists Conference | 0 | 0 | |
2017 | The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M.-H. Liao; C.-P. Hsieh; C.-C. Lee; MING-HAN LIAO | AIP Advances | | | |
2017 | The investigation of self-heating effect on Si<inf>1-x</inf>Ge<inf>x</inf> FinFETs with different device structures, Ge concentration, and operated voltages | Liao, M.-H.; Hsieh, C.-P.; Lee, C.-C.; MING-HAN LIAO | AIP Advances | | | |
2017 | The investigation of selfheating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages | M. H.Liao ; C.-P. Hsieh; C.-C. Lee | AIP Advances | | | |
2016 | The investigation of the diameter dimension effect on the Si nano-tube transistors | M. H.Liao ; C.-H. Yeh; C.-C. Lee; C.-P. Wang | AIP Advances | 0 | | |
2012 | The investigation on Dislocation Edge Stress Effects for Si N-MOSFETs | M.-H. Liao; C.-H. Chen; L.-C. Chang; C. Yang; S.-C. Kao; C.-F. Hsieh; MING-HAN LIAO | 2012 International Conference on Solid State Devices and Materials (SSDM) | | | |
2009 | An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures | M. H. Liao; MING-HAN LIAO | Applied Physics Letters | | | |
2011 | An Investigation on the Light-Emission Mechanism of Metal-Insulator-Semiconductor Light-Emitting Diodes with Different SiGe Quantum Well Structures | M.-H. Liao; L. C. Chang; MING-HAN LIAO | 2011 International Semiconductor Device Research Symposium (ISDRS) | | | |
2016 | Isolation Region Implant and Structure | M. H.Liao ; T.L. Lee | | | | |
2022 | Layout of 1.50-inch, 3207-ppi oled display with oslsi/silsi structure capable of division driving fabricated through vlsi process with side-by-side patterning by photolithography | Saito, Toshihiko; Mizuguchi, Toshiki; Okamoto, Yuki; Ito, Minato; Toyotaka, Kouhei; Kozuma, Munehiro; Matsuzaki, Takanori; Kobayashi, Hidetomo; Onuki, Tatsuya; Hiura, Yoshikazu; Hodo, Ryota; Sasagawa, Shinya; Kunitake, Hitoshi; Nakamura, Daiki; Sato, Hitomi; Kimura, Hajime; Wu, Chih Chiang; Yoshida, Hiroshi; Chen, Min Cheng; MING-HAN LIAO ; Chang, Shou Zen; Yamazaki, Shunpei | Digest of Technical Papers - SID International Symposium | 5 | 0 | |