公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | | | |
2007 | InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy | C. J. Wu; G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | | | |
1995 | The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy | Lee, T.-L.; Liu, J.-S.; HAO-HSIUNG LIN | Journal of Crystal Growth | | | |
2007 | Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; L. C. Chou; HAO-HSIUNG LIN | 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials | 1 | 11 | |
1996 | Incorporation of group V elements in Ga<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>P<inf>1-y</inf> grown by gas source molecular beam epitaxy | Lee, T.-L.; Liu, J.-S.; HAO-HSIUNG LIN | Journal of Electronic Materials | | | |
2006 | Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy | T. C. Ma; Y. T. Lin; T. Y. Chen; HAO-HSIUNG LIN | OPT 2006 | | | |
2016 | Indium and nitrogen K-edge X-ray absorption spectroscopy of In <inf>x</inf> Ga <inf>1-x</inf> N | Li, X.; Chang, C.M.; Hsueh, C.-H.; Lee, Z.-F.; Chen, J.-M.; Lin, H.-H.; Wang, X.; Dietz, N.; Guan, Y.-J.; Feng, Z.C.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | | | |
2015 | Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode | Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN | Microelectronics Journal | | | |
1992 | Infrared Detector Using Heavily Be-Doped GaAs | Shieh, T. H.; Liu, P. D.; Wu, Ming-Yen; Chang, T. C.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | 17th EDMS | | | |
2013 | Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001) | D. N. Talwar; T. R. Yang; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | Applied Physics Letters | | | |
2012 | InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction | Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN | IEEE Electron Device Letters | | 4 | |
1993 | Injection Current Model of a MOS Diode Under Charge Sharing Mode Readou Operation | Wu, C. W.; 林浩雄 ; Lin, Hao-Hsiung | IEEE Electronics Device | | | |
1993 | Injection Current Model of a MOS Diode under Charge-Sharing Mode Readout Operation | Wu, C.-W.; HAO-HSIUNG LIN | IEEE Transactions on Electron Devices | | | |
2005 | InPSb bulk layers grown by gas source molecular beam epitaxy | G. Tsai; HAO-HSIUNG LIN | Mid-infrared optoelectronics: Materials and Devices (MIOMD 7) | | | |
1997 | Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors | Tsai, J.-H.; Cheng, S.-Y.; Lour, W.-S.; Liu, W.-C.; HAO-HSIUNG LIN | Semiconductor Science and Technology | | | |
2018 | Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, rutherford backscattering, grazing incidence X-ray diffraction and Variable Angle Spectroscopic Ellipsometry | Luo, X.; Li, Y.; Yang, H.; Liang, Y.; He, K.; Sun, W.; Yao, S.; Lu, X.; Wan, L.; Feng, Z.; HAO-HSIUNG LIN | Crystals | 52 | 54 | |
2010 | Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy | Y. R. Lan; C. J. Wu; H. H. Lin; T. S. Chan; Z. C. Feng; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2013 | Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes | C. X. Wang; Y. T. He; M. T. Niu; J. Y. Yao; E. Jones; Z. R. Qiu; X. Zhang; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | IEDMS 2013, international electron devices and materials symposium | | | |
1993 | Investigations of InGaAs/InAlAs Double-Barrier Resonant Tunneling Diode | Tu, C. H.; Chen, J. G.; Huang, Chang-Hsiu; 林浩雄 ; Lin, Hao-Hsiung | 19th EDMS | | | |
2016 | Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy | Xin, B.; Zhang, Y.-M.; Wu, H.-M.; Feng, Z.C.; Lin, H.-H.; Jia, R.-X.; HAO-HSIUNG LIN | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | | | |