公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | MINGHWEI HONG ; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2005 | Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B | | | |
2002 | Papers presented at ECASIA'01-Microelectronics and Optoelectronics-Structure of Gd2O3 films epitaxially grown on GaAs (100) and GaN (0001) surfaces | Fluckiger, T; Erbudak, M; Hensch, A; Weisskopf, Y; MINGHWEI HONG ; Kortan, AR | Surface and Interface Analysis | | | |
1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; MINGHWEI HONG ; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L. | Applied Physics Letters | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; MINGHWEI HONG ; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; MINGHWEI HONG ; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL | Applied Physics Letters | | | |
2014 | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, R.L.; Chiang, T.H.; Hsueh, W.J.; Chen, K.H.; Lin, K.Y.; Brown, G.J.; Chyi, J.I.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, RL; Chiang, TH; Hsueh, WJ; Chen, KH; Lin, KY; Brown, GJ; Chyi, JI; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | Passivation of InAs and GaSb with High $κ$ Dielectrics-Growth, Structural, Chemical and Electrical Characterization | MINGHWEI HONG ; Kwo, J Raynien | | | | |
2011 | Passivation of InAs and GaSb with Novel High kappa Dielectrics | MINGHWEI HONG ; Kwo, J Raynien | | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 | Chang, P; Lee, WC; Huang, ML; Lee, YJ; MINGHWEI HONG ; Kwo, J | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | | | |
2017 | Perfecting the Al<inf>2</inf>O<inf>3</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As interfacial electronic structure in pushing metal-oxide-semiconductor field-effect-transistor device limits using in-situ atomic-layer-deposition | MINGHWEI HONG ; Wan, H.W.; Lin, K.Y.; Chang, Y.C.; Chen, M.H.; Lin, Y.H.; Lin, T.D.; Pi, T.W.; Kwo, J. | Applied Physics Letters | | | |
1992 | Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy | MINGHWEI HONG ; Chen, YK; Wu, MC; V; enberg, JM; Chu, SNG; Mannaerts, JP; Chin, MA | Applied Physics Letters | | | |
2013 | Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN | Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; MINGHWEI HONG | ACS applied materials & interfaces | | | |
2013 | Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> on GaN | Chang, W.-H.; Wu, S.-Y.; Lee, C.-H.; Lai, T.-Y.; Lee, Y.-J.; Chang, P.; Hsu, C.-H.; Huang, T.-S.; Kwo, J.R.; MINGHWEI HONG | ACS Applied Materials and Interfaces | | | |
1989 | Physical processing effects on polycrystalline YBa 2 Cu 3 O/sub x | Ford, WK; erson, J; Rubenacker, GV; Drumheller, JE; Chen, CT; MINGHWEI HONG ; Kwo, J; Liou, SH | | | | |
1989 | PHYSICAL PROCESSING EFFECTS ON POLYCRYSTALLINE YBa 2 Cu 3 Ox | Ford, WK; erson, J; Rubenacker, GV; Drumheller, John E; Chen, CT; MINGHWEI HONG ; Kwo, J; Liou, SH | Journal of Materials Research | | | |