公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Ga 2 O 3 „Gd 2 O 3…/Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, JF; Tsai, W; Lin, TD; Lee, YJ; Chen, CP; MINGHWEI HONG ; Kwo, J; Cui, S; Ma, TP | Applied Physics Letters | | | |
2009 | Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices | Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Ge metal-oxide-semiconductor devices with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectric | Chu, LK; Chiang, TH; Lin, TD; Lee, YJ; Chu, RL; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2014 | Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100) | Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors | Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; MINGHWEI HONG ; Kwo, J | Applied Physics Letters | | | |
2005 | Growth rate effects on InGaAs/GaAs quantum dots | Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; MINGHWEI HONG ; others | MBE-Taiwan | | | |
2009 | High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers | Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; MINGHWEI HONG | European Solid State Device Research Conference, 2009 | | | |
2009 | High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric | Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; MINGHWEI HONG ; Kwo, J; Tsai, W; Wang, YC | Applied Physics Letters | | | |
2013 | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Lin, TD; Chang, WH; Chu, RL; Chang, YC; Chang, YH; Lee, MY; Hong, PF; Chen, Min-Cheng; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | High-quality molecular-beam-epitaxy-grown Ga2O3 „Gd2O3… on Ge „100…: Electrical and chemical characterizations | Chu, RL; Lin, TD; Chu, LK; Huang, ML; Chang, CC; MINGHWEI HONG ; Lin, CA; Kwo, J | J. Vacuum Science and Technology B | | | |
2011 | High-resolution core-level photoemission study of CF ${$sub 4$}$-treated Gd ${$sub 2$}$ O ${$sub 3$}$(Ga ${$sub 2$}$ O ${$sub 3$}$) gate dielectric on Ge probed by synchrotron radiation | Pi, T-W; Huang, ML; Kwo, J; Lee, WC; Chu, LK; Lin, TD; Chiang, TH; Wang, YC; Wu, YD; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; MINGHWEI HONG | APS Meeting Abstracts | | | |
2012 | In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS | MINGHWEI HONG ; Kwo, J; Lin, TD; Huang, ML | MRS bulletin | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; MINGHWEI HONG | ECS Transactions | | | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation | Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; MINGHWEI HONG ; Kwo, J; Liao, CC; Cheng, KY; Lay, TS | 2007 International Semiconductor Device Research Symposium | | | |
2010 | InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS | MINGHWEI HONG ; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P | Fundamentals of III-V Semiconductor MOSFETs | | | |
2006 | Interfacial self-cleaning in atomic layer deposition of HfO 2 gate dielectric on In 0.15 Ga 0.85 As | Chang, CH; Chiou, YK; Chang, YC; Lee, KY; Lin, TD; Wu, TB; MINGHWEI HONG ; Kwo, J | Applied Physics Letters | | | |