Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2008 | Growth and structural characteristics of GaN/AlN/nanothick gamma-Al (2) O (3)/Si (111) | Lee, WC; Lee, YJ; Tung, LT; Wu, SY; Lee, CH; MINGHWEI HONG ; Ng, HM; Kwo, J; Hsu, CH | Journal of Vacuum Science & Technology B | | | |
2009 | High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers | Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; MINGHWEI HONG | European Solid State Device Research Conference, 2009 | | | |
2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; MINGHWEI HONG ; Kwo, J; Tsai, W; Wang, YC | Applied Physics Letters | | | |
2008 | Interfacial-layers-free Ga2O3 (Gd2O3)/Ge MOS Diodes | Lee, CH; Lin, TD; Lee, KY; Huang, ML; Tung, LT; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; MINGHWEI HONG ; Kwo, J; Hong, JM; Tsai, CC | Applied Physics Letters | | | |
2009 | Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; MINGHWEI HONG ; Kwo, J; Hong, JM; Tsai, CC | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y 2 O 3 on Ge | Chu, LK; Lee, WC; Huang, ML; Chang, YH; Tung, LT; Chang, CC; Lee, YJ; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3) on Ge (100) | Chu, LK; Lin, TD; Lee, CH; Tung, LT; Lee, WC; Chu, RL; Chang, CC; MINGHWEI HONG ; Kwo, J | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics | Lee, CH; Lin, TD; Tung, LT; Huang, ML; MINGHWEI HONG ; Kwo, J | Journal of Vacuum Science & Technology B | | | |
2009 | Molecular beam epitaxy-grown Al 2 O 3/HfO 2 high-$κ$ dielectrics for germanium | Lee, WC; Chin, BH; Chu, LK; Lin, TD; Lee, YJ; Tung, LT; Lee, CH; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science & Technology B | | | |