公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Novel Materials I-Characteristics of Ga2O3 (Gd2O3)/GaAs interface: Structures and compositions | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Krajewski, JJ; Lu, ZH; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2005 | Papers from the 22nd North American Conference on Molecular Beam Epitaxy-Oxides-Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy | Lay, TS; Chang, SC; Din, GJ; Yeh, CC; Hung, WH; Lee, WG; Kwo, J; Hong, M; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG | Applied Physics Letters | | | |
2014 | Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | Chu, RL; Chiang, TH; Hsueh, WJ; Chen, KH; Lin, KY; Brown, GJ; Chyi, JI; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 | Chang, P; Lee, WC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | | | |
1989 | Physical processing effects on polycrystalline YBa 2 Cu 3 O/sub x | Ford, WK; erson, J; Rubenacker, GV; Drumheller, JE; Chen, CT; Hong, M; Kwo, J; Liou, SH; MINGHWEI HONG | | | | |
1989 | PHYSICAL PROCESSING EFFECTS ON POLYCRYSTALLINE YBa 2 Cu 3 Ox | Ford, WK; erson, J; Rubenacker, GV; Drumheller, John E; Chen, CT; Hong, M; Kwo, J; Liou, SH; MINGHWEI HONG | Journal of Materials Research | | | |
1987 | Polarized neutron diffraction studies of Gd-Y synthetic superlattices | Majkrzak, CF; Cable, J Wesley; Kwo, J; Hong, M; McWhan, DB; Yafet, Y; Waszczak, JV; Grimm, H; Vettier, C; MINGHWEI HONG | Journal of Applied Physics | | | |
2001 | Probing the microscopic compositions at Ga 2 O 3 (Gd 2 O 3)/GaAs interface by core level photoelectron spectroscopy | Lay, TS; Huang, KH; Hung, Wei-Hsiu; Hong, M; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Solid-State Electronics | | | |
2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others; MINGHWEI HONG | Journal of Applied Physics | | | |
2001 | Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
1988 | Properties of In Situ Superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub 7-x Films by Molecular Beam Epitaxy With an Activated Oxygen Source | Kwo, J; Hong, M; Trevor, DJ; MINGHWEI HONG | Science and Technology of Thin Film Superconductors-Proceedings | | | |
2012 | PROPERTIES OF IN-SITU SUPERCONDUCTING Y1Ba2Cu2O7 x FILMS BY | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | | | |
1989 | Properties of in-Situ Superconducting Y1Ba2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source | Kwo, J; Hong, M; Trevor, DJ; Fleming, RM; White, AE; Farrow, RC; Kortan, AR; Short, KT; MINGHWEI HONG | Science and Technology of Thin Film Superconductors | | | |
1985 | Properties of rare-earth metal superlattice grown by molecular-beam epitaxy | Kwo, J; Gyorgy, EM; Hong, M; Lowe, WP; McWhan, DB; Superfine, R; MINGHWEI HONG | Journal of Applied Physics | | | |
1989 | Properties of superconducting Tl 2 Ba 2 Ca 2 Cu 3 O 10 films by sputtering | Hong, M; Kwo, J; Chen, CH; Kortan, AR; Bacon, DD; Liou, SH; MINGHWEI HONG | Thin Solid Films | | | |