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C. S. Yeh
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顯示 1 到 17 筆資料,總共 17 筆
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作者
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scopus
WOS
全文
2011
Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect
C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
International Electron Device Material Symposium
2008
Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect
I. S. Lin; V. C. Su; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
IEEE Electron Device Letters
7
3
2009
Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device
H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
EUROSOI
0
0
2012
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Solid State Electronics
5
4
2013
Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect
A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
EUROSOI
2010
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Microelectronics Reliability
5
6
2009
Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect
H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
International Electron Devices Materials Symposium
2010
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
EUROSOI
2011
Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model
S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
International Semiconductor Device Research Symposium ISDRS
1
0
2009
Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device
J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
EUROSOI
2010
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
Solid-State Electronics
1
1
2008
Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device
I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
IEEE Transactions Electron Devices
3
1
2007
STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices
I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO
IEEE International Semicondcutor Device Research Symp (ISDRS)
3
0
2008
STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device
H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
IEDMS
2008
STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices
J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
ICSICT
2008
STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices
I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
European SOI Conference
2012
Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect
S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
Eurosoi Conference