Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2021 | Architecture and Optimization of 2T (Footprint) SRAM | Chung C.-C; Lin H.-C; Huang B.-W; Tsen C.-J; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
2021 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Chen Y.-R; Chen J.-Y; Jan S.-R; Huang B.-W; Chueh S.-J; Tsen C.-J; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 3 | ||
2021 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching | Tsai C.-E; Liu Y.-C; Tu C.-T; Huang B.-W; Jan S.-R; Chen Y.-R; Chen J.-Y; Chueh S.-J; Cheng C.-Y; Tsen C.-J; Ma Y; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
2021 | RF Performance of Stacked Si Nanosheet nFETs | Lin H.-C; Chou T; Chung C.-C; Tsen C.-J; Huang B.-W; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
2022 | RF Performance Optimization of Stacked Si Nanosheet nFETs | Lin H.-C; Chou T; Chiu K.-Y; Chung C.-C; Tsen C.-J; CHEE-WEE LIU | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 2 | 0 |