第 1 到 8 筆結果,共 8 筆。
公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 | |
---|---|---|---|---|---|---|---|
1 | 2012 | Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al2O3/InP Heterostructures with Various Surface Orientations (001), (110), and (111) | Chu, Lung-Kun; Merckling, Clement; Dekoster, Johan; Kwo, Jueinai Raynien; Hong, Minghwei ; Caymax, Matty; MINGHWEI HONG | Applied Physics Express | 5 | 5 | |
2 | 2012 | Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric | Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | 4 | 4 | |
3 | 2012 | Surface-Atom Core-Level Shift in GaAs(111)A-2x2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei ; MINGHWEI HONG | Journal of the Physical Society of Japan | 10 | 10 | |
4 | 2012 | Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device | Chang, W.H.; Chiang, T.H.; Lin, T.D.; Chen, Y.H.; Wu, K.H.; Huang, T.S.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | 9 | 9 | |
5 | 2012 | Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition | Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 48 | 48 | |
6 | 2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena | 4 | 4 | |
7 | 2011 | Achieving a Low Interfacial Density of States with a Flat Distribution in High-kappa Ga2O3(Gd2O3) Directly Deposited on Ge | Lin, Chunan; Lin, Hanchung; Chiang, Tsunghung; Chu, Reilin; Chu, Lungkun; Lin, Tsungda; Chang, Yaochung; Wang, Wei-E; Kwo, J.Raynien; MINGHWEI HONG | Applied Physics Express | 10 | 10 | |
8 | 2011 | Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics | Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei ; MINGHWEI HONG | Applied Physics Express | 32 | 32 |