https://scholars.lib.ntu.edu.tw/handle/123456789/404542
Title: | Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure Design | Authors: | M. H.Liao C. H. Chen L.-C. Chang S. C. Kao M.-Y. Yu G.-H. Liu M.-C.Huang |
Issue Date: | 2013 | Journal Volume: | 60 | Journal Issue: | 2 | Start page/Pages: | 767-770 | Source: | IEEE Transaction on Electron Devices | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/404542 |
Appears in Collections: | 電機工程學系 |
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