Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2010 | 75GHz Ga2O3/GaN single nanowire metal-oxide-semiconductor transisto | J.-W. Yu; Y.-R. Wu; J.-J. Huang; L.-H. Peng; JIAN-JANG HUANG ; LUNG-HAN PENG | 32nd IEEE Compound Semiconductor IC symposium | 2 | 0 | |
2003 | Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation | H.-M. Wu; J.-Y. Lin; L.-H. Peng; C.-M. Lee; J.-I. Chyi; E. Chen; LUNG-HAN PENG | International Semiconductor Device Research Symposium (ISDRS’03) | 0 | 0 | |
2018 | Antireflection and self-cleaning film with moth-eye-like structure for mobile flexible displays | C. Tan; Y.-H. Lan; M.-K. Wei; L.-H. Peng; I-C. Cheng; S.-T. Wu; J.-H. Lee; I-CHUN CHENG | SPIE Photonics West 2018 | |||
2010 | Broad temperature and spectral acceptance bandwidth of quasi-phase-matching green and blue lasers with high conversion efficiency | C.-S. Wen; C.-C. Wu; C.-W. Liu; C.-Y. Chu; C.-L. Chen; W.-S. Wang; C.-M. Lai; A. Boudrioua; A.-H. Kung; L.-H. Peng; LUNG-HAN PENG | 16th International Conference on Crystal Growth | |||
2017 | Broadband antireflection film with moth-eye-like structure for flexible display applications | C. Tan; J.-H. Lee; Y.-H. Lan; M.-K. Wei; L.-H. Peng; I-C. Cheng; S.-T. Wu; I-CHUN CHENG | Optica | 123 | 111 | |
2011 | Cristaux photoniques non-lineaires sur niobate de lithium: application aux sources lasers multi-longueurs d’ondes | Q. Ripault; A. Boudrioua; L.-H. Peng; P. Moreti; T. Touam; F. Meriche; E. Ntsoenzok; LUNG-HAN PENG | d’OPTIQUE Marseille | |||
2006 | Deep Sub-micron GaN Photonic Crystal Fabricated by Self-assembly Lithography with Photo-enhanced Wet Etching | H.-M. Wu; P.-C.Huang; W.-H. Tu; C.-M. Lai; L.-H. Peng; LUNG-HAN PENG | International Workshop on Nitride Semiconductor 2006 | |||
2010 | Dispersion-activated Wide-range temperature operation on quasi-phase-Matching green lasers with high single-pass conversion efficiency | C.-W. Liu; C.-S. Wen; C.-Y. Chu; C.-Y. Lee; L.-H. Peng; C.-L. Chen; W.-S. Wang; LUNG-HAN PENG | Laser Optics 2010 conference, LO’2010 | |||
2010 | Effects of gate-bias stress on ZnO thin-film transistors | L.-Y. Su; H.-Y. Lin; S.-L. Wang; Y.-H. Yeh; C.-C. Cheng; L.-H. Peng; J.-J. Huang; JIAN-JANG HUANG ; LUNG-HAN PENG | Journal of the Society for Information Display | 4 | 4 | |
2013 | Efficient reduction of speckle contrast ratio in scanning laser projectors | P.C. Yeh; J.-H. Hong; Y.-T. Wang; Y.-M. Lin; J.-H. Lee; H.-Y. Lin; L.-H. Peng; C.-M. Lai; C.-C. Tu; C.-H. Lin; LUNG-HAN PENG | International conference on laser display (LDC) 2013 | |||
2009 | Efficient Second Harmonic Blue Generation from Self-Doubling of Quasi-Phase-Matched PPLT Parametric Oscillator | I.-N. Hu; Y.-Y Lai; C. Y. Lee; L.-H. Peng; A. H. Kung; LUNG-HAN PENG | CLEO 2009 | |||
2010 | Efficient up-conversion blue lasers on periodically poled lithium tentalate with cascaded quasi-phase-matching structure | C.-C. Wu; C.-S. Wen; Y.-Y. Lai; L.-H. Peng; C.-M. Lai; A. Boudrioua; LUNG-HAN PENG | Laser Optics’2010 conference, LO’2010 | |||
2012 | High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures | S.-L. Wang; J.-W. Yu; P.-C. Yeh; H.-W. Kuo; L.-H. Peng; A. A. Fedyanin; E. D. Mishina; A. S Sigov; LUNG-HAN PENG | Applied Physics Letters | 13 | ||
2007 | High Quality Factor with Fundamental Resonant Mode near the Bandedge of GaN Triangular Submicron Laser Cavity | C.-M Lai; H.-M. Wu; P.-C. Huang; B.-C. Yeh; C.-L. Chou; L.-H. Peng; LUNG-HAN PENG | CLEO 2007 | 0 | 0 | |
2013 | Investigation of a planar optical waveguide in 2D PPLN using helium implantation technique | Q. Ripault; M. W. Lee; F. Meriche; T. Touam; B. Courtois; E. Ntsoenzok; L.-H. Peng; A. Fisher; A. Boudrioua.; LUNG-HAN PENG | Optics Express | 3 | ||
2005 | Optical characterization of 2D (2) nonlinear photonic crystal on periodically poled bulk ZnO:LiNbO3 crysta | L.-F. Lin; L.-H. Peng; S.-C. Pei; A. H. Kung; Z.-R. Xia; LUNG-HAN PENG | CLEO_PR 2005 | |||
2005 | Suppression of surface leakage in GaN MOS device by crystalline Ga2O3 layer MOS | H.-M. Wu; C.-Y. Lu; L.-H. Peng; LUNG-HAN PENG | 6th International Conference on Nitride Semiconductors |