公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2020 | Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes | Lynsky, C.; Alhassan, A.I.; Lheureux, G.; Bonef, B.; Denbaars, S.P.; Nakamura, S.; Wu, Y.-R.; Weisbuch, C.; Speck, J.S.; YUH-RENN WU | Physical Review Materials | 18 | 15 | |
2020 | Bistriazoles with a Biphenyl Core Derivative as an Electron-Favorable Bipolar Host of Efficient Blue Phosphorescent Organic Light-Emitting Diodes | JIUN-HAW LEE ; Chen, C.-H.; Lin, B.-Y.; Lan, Y.-H.; Huang, Y.-M.; Chen, N.-J.; Huang, J.-J.; Volyniuk, D.; Keruckiene, R.; Grazulevicius, J.V.; YUH-RENN WU ; MAN-KIT LEUNG ; Chiu T.-L. | ACS Applied Materials and Interfaces | 10 | 10 | |
2021 | Calculation of field dependent mobility in MoS2and WS2with multi-valley monte carlo method | Chen P.-F; Wu Y.-R.; YUH-RENN WU | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 3 | 0 | |
2007 | Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures | Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU | Applied Physics Letters | 55 | 46 | |
2012 | Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells | Lang, J. R.; Young, N. G.; Farrell, R. M.; Wu, Y. -R.; Speck, J. S.; YUH-RENN WU | Applied Physics Letters | 75 | 65 | |
2023 | Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation | Tsai, Tsung Yin; Qwah, Kai Shek; Banon, Jean Philippe; Filoche, Marcel; Weisbuch, Claude; YUH-RENN WU ; Speck, James S. | Physical Review Applied | | 0 | |
2014 | Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics | Chen, Ting-Gang; Yu, Peichen; Chen, Shih-Wei; Chang, Feng-Yu; Huang, Bo-Yu; Cheng, Yu-Chih; Hsiao, Jui-Chung; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | Progress in Photovoltaics | 59 | 51 | |
2020 | Characterization of semi-polar (20 2 ¯ 1) InGaN microLEDs | Horng, R.-H.; Sinha, S.; Wu, Y.-R.; Tarntair, F.-G.; Han, J.; Wuu, D.-S.; YUH-RENN WU | Scientific Reports | 7 | 6 | |
2021 | Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse | Yang J.-X; Lin D.-J; Wu Y.-R; YUH-RENN WU ; JIAN-JANG HUANG | IEEE Journal of the Electron Devices Society | 3 | 3 | |
2020 | Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors | Chow, Y.C.; Lee, C.; Wong, M.S.; Wu, Y.-R.; Nakamura, S.; Denbaars, S.P.; Bowers, J.E.; Speck, J.S.; YUH-RENN WU | Optics Express | 9 | 10 | |
2022 | Design of AlInAs/GaAsSb/InGaAsSb Double Heterojunction Bipolar Transistors for The Unit Current Gain Cutoff Frequency of 850GHz | Liu, Yun Hao; Liao, Yu Tzu; JIAN-JANG HUANG ; YUH-RENN WU | 2022 Compound Semiconductor Week, CSW 2022 | 0 | 0 | |
2014 | Design of anti-ring back reflectors for thin-film solar cells based on three-dimensional optical and electrical modeling | Hsiao H.-H.; Chang H.-C.; HUNG-CHUN CHANG ; YUH-RENN WU ; HUI-HSIN HSIAO | Applied Physics Letters | 6 | 8 | |
2017 | A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons | Shuo-Fan Chen; Yuh-Renn Wu; YUH-RENN WU | Applied Physics Letters | 11 | 10 | |
2022 | Design of Monolayer MoS2Nanosheet Transistors for Low-Power Applications | Chen P.-F; Chen E; Wu Y.-R.; YUH-RENN WU | IEEE Transactions on Electron Devices | 1 | 1 | |
2022 | Development of time-dependent Exciton diffusion solver for modeling Triplet-Triplet Fusion Mechanism in OLEDs | Huang, Jun Yu; Hung, Hsiao Chun; Hsu, Kung Chi; Chen, Chia Hsun; Lee, Pei Hsi; Lin, Hung Yi; Lin, Bo Yen; MAN-KIT LEUNG ; Chiu, Tien Lung; JIUN-HAW LEE ; YUH-RENN WU | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | 0 | 0 | |
2006 | Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length | Wu, YR; Singh, M; Singh, J; YUH-RENN WU | IEEE Transactions on Electron Devices | 51 | 45 | |
2018 | Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode | Wen-Yen Chang; Yang Kuo; Yu-Feng Yao; C. C. Yang; Yuh-Renn Wu; Yean-Woei Kiang; YUH-RENN WU ; CHIH-CHUNG YANG | Optics Express | 10 | 9 | |
2020 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Nanophotonics | 20 | 18 | |
2021 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Frontiers in Optics and Photonics | 1 | 0 | |
2008 | Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors | Chung, JW; Zhao, X; Wu, YR; Singh, J; Palacios, T; YUH-RENN WU | Applied Physics Letters | 14 | 17 | |