公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, TD; Chang, P; Chiu, HC; Hong, M; Kwo, J; Lin, YS; Hsu, Shawn SH; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2010 | DC and RF characteristics of self-aligned inversion-channel In0. 53Ga0. 47As MOSFETs using MBE-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, T; Chang, P; Chiu, H; Hong, M; Kwo, J; Lin, Y; Hsu, S; MINGHWEI HONG | Jorurnal Vacuum Science and Technology B | | | |
2005 | Department of Materials Science and Engineering, National Tsing Hua University, Hsin Chu, 300, Taiwan | Lee, WC; Lee, YJ; Wu, YD; Chang, P; Huang, YL; Hsu, YL; Mannaerts, JP; Lo, RL; Chen, FR; Maikap, S; others; MINGHWEI HONG | Journal of Crystal Growth | | | |
2007 | Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3) as a gate dielectric | Tsai, PJ; Chu, LK; Chen, YW; Chiu, YN; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2005 | Depletion-mode InGaAs/GaAs MOSFET with Oxide Passivated by Amorphous Si | Tsai, PJ; Chiu, UN; Chu, LK; Chen, YW; Yang, HP; Chang, P; Kwo, J; Chi, J; Hong, M; MINGHWEI HONG | 真空科技 | | | |
2013 | Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe3Si films with normal metals Au and Pt | Hung, HY; Luo, GY; Chiu, YC; Chang, P; Lee, WC; Lin, JG; Lee, SF; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
2011 | Direct measurement of interfacial structure in epitaxial Gd 2 O 3 on GaAs (001) using scanning tunneling microscopy | Chiu, Ya-Ping; Shih, MC; Huang, BC; Shen, JY; Huang, ML; Lee, WC; Chang, P; Chiang, TH; Hong, M; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs | Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | Enhancement Mode InGaAs MOSFETs | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; Hong, M; MINGHWEI HONG | Meeting Abstracts | | | |
2011 | Epitaxial stabilization of a monoclinic phase in Y 2 O 3 films on c-plane GaN | Chang, WH; Chang, P; Lee, WC; Lai, TY; Kwo, J; Hsu, C-H; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2005 | Growth rate effects on InGaAs/GaAs quantum dots | Huang, CY; Ou, TM; Chang, WT; Wu, MC; Shen, JJ; Liang, CY; Lin, SY; Chang, P; Lin, TD; Hong, M; others; MINGHWEI HONG | MBE-Taiwan | | | |
2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric | Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; Hong, M; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; Hong, M; Kwo, J; Tsai, W; Wang, YC; MINGHWEI HONG | Applied Physics Letters | | | |
2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | Hong, M; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others; MINGHWEI HONG | Applied Physics Letters | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
2010 | InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric | Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |