Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; MINGHWEI HONG | Advanced Materials | | | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; MINGHWEI HONG ; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C. | Applied Physics Letters | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; MINGHWEI HONG ; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J. | Applied Physics Letters | | | |
2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; MINGHWEI HONG ; Chiu, Y.N.; Kwo, J.; Wang, Y.H. | Applied Physics Letters | | | |
2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al<inf>2</inf>O<inf>3</inf> | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; MINGHWEI HONG | Applied Physics Letters | | | |