Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
---|---|---|---|---|---|---|
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; MINGHWEI HONG ; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M. | Applied Physics Letters | |||
1999 | Passivation of GaAs using (Ga<inf>2</inf>O<inf>3</inf>)<inf>1 - x</inf>(Gd<inf>2</inf>O<inf>3</inf>)<inf>x</inf>, 0?x?1.0 films | Kwo, J.; Murphy, D.W.; MINGHWEI HONG ; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L. | Applied Physics Letters |