公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers | Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J. | Applied Physics Letters | | | |
2004 | Bandwidth Enhancement in an Integratable SiGe
Phototransistor by Removal of Excess Carriers | Pei, Z.; Shi, J.W.; Hsu, Y.M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.J.; Liu, C.W. | IEEE ELECTRON DEVICE LETTERS | | | |
2007 | Charge storage characteristics of atomic layer deposited RuO<inf>x</inf> nanocrystals | Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Lee, L.S.; Yang, J.R.; Tsai, M.J.; JER-REN YANG | Applied Physics Letters | | | |
2007 | Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications | Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. | Semiconductor Science and Technology 22: | | | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |