公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | A complete Raman mapping of phase transitions in Si under indentation | Das, C.R.; Hsu, H.C.; Dhara, S.; Bhaduri, A.K.; Raj, B.; Chen, L.C. ; Chen, K.H.; Albert, S.K.; Ray, A.; Tzeng, Y. | Journal of Raman Spectroscopy | 17 | 15 | |
2010 | Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si | Das, C.R.; Dhara, S.; Jeng, Y.-R.; Tsai, P.-C.; Hsu, H.C.; Raj, B.; Bhaduri, A.K.; Albert, S.K.; Tyagi, A.K.; Chen, L.C. ; Chen, K.H. | Applied Physics Letters | 22 | 22 | |
2006 | Ferromagnetism in cobalt-doped n-GaN | Dhara, S.; Sundaravel, B.; Nair, K.G.M.; Kesavamoorthy, R.; Valsakumar, M.C.; Chandrasekhar Rao, T.V.; Chen, L.C. ; Chen, K.H. | Applied Physics Letters | 23 | 22 | |
2010 | Focused ion beam induced nanojunction and defect doping as a building block for nanoscale electronics in GaN nanowires | Dhara, S.; Lu, C.Y.; Wu, C.T.; Hsu, C.W.; Tu, W.S.; Chen, K.H.; Wang, Y.L.; Chen, L.C. ; Raj, B. | Journal of Physical Chemistry C | 7 | 7 | |
2005 | Formation and in situ dynamics of metallic nanoblisters in Ga+ implanted GaN nanowires | Datta, A.; Dhara, S.; Muto, S.; Hsu, C.W.; Wu, C.T.; Shen, C.H.; Tanabe, T.; Maruyama, T.; Chen, K.H.; Chen, L.C. ; Wang, Y.L. | Nanotechnology | 9 | 9 | |
2010 | Growth orientation dependent hardness for epitaxial wurtzite InN Films | Kataria, S.; Liu, T.-W.; Hsiao, C.-L.; Dhara, S.; Chen, L.-C. ; Chen, K.-H.; Dash, S.; Tyagi, A.K. | Journal of Nanoscience and Nanotechnology | 6 | 6 | |
2003 | Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon | Wu, J.S.; Chen, Y.F.; Dhara, S.; Wu, C.T.; Chen, K.H.; Chen, L.C.; YANG-FANG CHEN | Applied Physics Letters | 10 | 10 | |
2007 | Long-range ferromagnetic ordering at room temperature in Co+ implanted TiO2 nanorods | Dhara, S.; Wu, J.J.; Mangamma, G.; Bera, S.; Wu, C.T.; Magudapathy, P.; Yu, C.C.; Kamruddin, M.; Nair, K.G.M.; Tyagi, A.K.; Chen, L.C. ; Chen, K.H. | Nanotechnology | 9 | 9 | |
2008 | Mechanism of bright red emission in Si nanoclusters | Dhara, S.; Lu, C.-Y.; Nair, K.G.M.; Chen, K.-H.; Chen, C.-P.; Huang, Y.-F.; David, C.; Chen, L.-C. ; Raj, B. | Nanotechnology | 23 | 19 | |
2009 | The mechanism of the recrystallization process in epitaxial GaN under dynamic stress field: Atomistic origin of planar defect formation | Das, C.R.; Dhara, S.; Hsu, H.C.; Chen, L.C. ; Jeng, Y.R.; Bhaduri, A.K.; Raj, B.; Chen, K.H.; Albert, S.K. | Journal of Raman Spectroscopy | 8 | 7 | |
2007 | Multiphonon Raman scattering in GaN nanowires | Dhara, S.; Chandra, S.; Mangamma, G.; Kalavathi, S.; Shankar, P.; Nair, K.G.M.; Tyagi, A.K.; Hsu, C.W.; Kuo, C.C.; Chen, L.C. ; Chen, K.H.; Sriram, K.K. | Applied Physics Letters | 51 | 52 | |
2006 | Nitrogen ion beam synthesis of InN in InP(100) at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Sastry, V.S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C. ; Chen, K.H.; Santhakumar, K.; Soga, T. | Applied Physics Letters | 6 | 6 | |
2005 | Optical characterization of GaN by N+ implantation into GaAs at elevated temperature | Dhara, S.; Magudapathy, P.; Kesavamoorthy, R.; Kalavathi, S.; Nair, K.G.M.; Hsu, G.M.; Chen, L.C. ; Chen, K.H.; Santhakumar, K.; Soga, T. | Applied Physics Letters | 14 | 13 | |
2008 | Recrystallization of epitaxial GaN under indentation | Dhara, S.; Das, C.R.; Hsu, H.C.; Raj, B.; Bhaduri, A.K.; Chen, L.C. ; Chen, K.H.; Albert, S.K.; Ray, A. | Applied Physics Letters | 13 | 14 | |
2008 | Surface optical Raman modes in InN nanostructures | Sahoo, S.; Hu, M.S.; Hsu, C.W.; Wu, C.T.; Chen, K.H.; Chen, L.C. ; Arora, A.K.; Dhara, S. | Applied Physics Letters | 37 | 35 | |