公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress | Hong, C.-C.; JENN-GWO HWU | Applied Physics Letters | 17 | 18 | |
2002 | Enhanced thermally induced stress effect on an ultrathin gate oxide | Su, J.-L.; Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 8 | 8 | |
2001 | Improvement in oxide thickness uniformity by repeated spike oxidation | Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 4 | 4 | |
2002 | Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow | Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 3 | 3 | |
2002 | Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing | Hong, C.-C.; Chen, J.-L.; JENN-GWO HWU | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films | 1 | 2 | |
2002 | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | Hong, C.-C.; Chen, W.-R.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 5 | | |
2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |
2008 | Temporal and spatial characteristics of positive and negative Indian Ocean dipole with and without ENSO | Hong, C.-C.; LU MONG-MING ; Kanamitsu, Masao | Journal of Geophysical Research Atmospheres | 94 | 88 | |