公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2024 | Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies | Huang, Bo Wei; Hsieh, Wan Hsuan; Tu, Chien Te; Liu, Yi Chun; Chen, Yu Rui; CHEE-WEE LIU ; Cheng, Chun Yi; Chou, Hung Chun; Liu, C. W. | IEEE Electron Device Letters | | | |
2023 | Extremely High-κ Hf<inf>0.2</inf>Zr<inf>0.8</inf>O<inf>2</inf>Gate Stacks Integrated into Ge<inf>0.95</inf>Si<inf>0.05</inf>Nanowire and Nanosheet nFETs Featuring Respective Record Ion per Footprint of 9200μA/μm and Record Ion per Stack of 360μA at V<inf>OV</inf>=V<inf>DS</inf>=0.5V | Liu, Yi Chun; Chen, Yu Rui; Chen, Yun Wen; Lin, Hsin Cheng; Hsieh, Wan Hsuan; Tu, Chien Te; Huang, Bo Wei; WEI-JEN CHEN; Cheng, Chun Yi; Chueh, Shee Jier; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
2022 | First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation | Tu, Chien Te; Liu, Yi Chun; Huang, Bo Wei; Chen, Yu Rui; Hsieh, Wan Hsuan; Tsai, Chung En; Chueh, Shee Jier; Cheng, Chun Yi; Ma, Yichen; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 1 | 0 | |
2023 | First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels | Tu, Chien Te; Hsieh, Wan Hsuan; Chen, Yu Rui; Huang, Bo Wei; Liao, Yu Tsung; WEI-JEN CHEN; Liu, Yi Chun; Cheng, Chun Yi; Chou, Hung Chun; Lu, Hao Yi; Hsin, Cheng Hsien; He, Geng Min; Woo, Dong Soo; Chueh, Shee Jier; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2023 | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | Chen, Yu Rui; Liu, Yi Chun; Zhao, Zefu; Hsieh, Wan Hsuan; Lee, Jia Yang; Tu, Chien Te; Huang, Bo Wei; Wang, Jer Fu; Chueh, Shee Jier; Xing, Yifan; Chen, Guan Hua; Chou, Hung Chun; Woo, Dong Soo; Lee, M. H.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
2022 | Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies | Tsai, Chung En; Cheng, Chun Yi; Huang, Bo Wei; Lin, Hsin Cheng; Chou, Tao; Tu, Chien Te; Liu, Yi Chun; Jan, Sun Rong; Chen, Yu Rui; Hsieh, Wan Hsuan; Chiu, Kung Ying; Chueh, Shee Jier; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2023 | Towards Epitaxial Ferroelectric HZO on n<sup>+</sup>-Si/Ge Substrates Achieving Record 2P<inf>r</inf>= 84 μC/cm<sup>2</sup>and Endurance > 1E11 | Zhao, Zefu; Chen, Yu Rui; Chen, Yun Wen; Hsieh, Wan Hsuan; Wang, Jer Fu; Lee, Jia Yang; Xing, Yifan; Chen, Guan Hua; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |