公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2017 | Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces | Lan H.-S; CHEE-WEE LIU | Journal of Physics D: Applied Physics | | | |
2017 | Band calculation of lonsdaleite Ge | Chen P.-S; Fan S.-T; Lan H.-S; CHEE-WEE LIU | Journal of Physics D: Applied Physics | | | |
2017 | High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing | Wong I.-H; Lu F.-L; Huang S.-H; Ye H.-Y; Lu C.-T; Yan J.-Y; Shen Y.-C; Peng Y.-J; Lan H.-S; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 4 | 0 | |
2018 | Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence | Ye H.-Y; Chung C.-C; Wong I.-H; Lan H.-S; CHEE-WEE LIU | 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 | | | |
2017 | Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys | Lan H.-S; Chang S.T; CHEE-WEE LIU | Physical Review B | | | |
2016 | Strained Ge0.91Sn0.09Quantum Well p-MOSFETs | Huang Y.-S; Huang C.-H; Huang C.-H; Lu F.-L; Chang D.-Z; Lin C.-Y; Wong I.-H; Jan S.-R; Lan H.-S; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P; Chu S.S; Kuppurao S. | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 | 0 | 0 | |