公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2018 | Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well | Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; CHEE-WEE LIU | Optical Materials Express | | | |
2018 | Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition | Tsai C.-E; Lu F.-L; Chen P.-S; CHEE-WEE LIU | Thin Solid Films | | | |
2020 | Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors | Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2018 | Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications | Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2020 | First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels | Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2020 | First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping | Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise | Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2018 | First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching | Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08 | Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU | Thin Solid Films | | | |
2017 | High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing | Wong I.-H; Lu F.-L; Huang S.-H; Ye H.-Y; Lu C.-T; Yan J.-Y; Shen Y.-C; Peng Y.-J; Lan H.-S; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 4 | 0 | |
2020 | Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels | Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2017 | Process simulation of pulsed laser annealing on epitaxial Ge on Si | Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; CHEE-WEE LIU | ECS Journal of Solid State Science and Technology | | | |
2020 | Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping | Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2016 | Strained Ge0.91Sn0.09Quantum Well p-MOSFETs | Huang Y.-S; Huang C.-H; Huang C.-H; Lu F.-L; Chang D.-Z; Lin C.-Y; Wong I.-H; Jan S.-R; Lan H.-S; CHEE-WEE LIU ; Huang Y.-C; Chung H; Chang C.-P; Chu S.S; Kuppurao S. | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 | 0 | 0 | |
2021 | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; CHEE-WEE LIU | IEEE Electron Device Letters | | | |