Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2011 | Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals | Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; JER-REN YANG | Journal of Applied Physics | 32 | 31 | |
2012 | Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure | Banerjee, W.; Maikap, S.; Rahaman, S.Z.; Prakash, A.; Tien, T.-C.; Li, W.-C.; JER-REN YANG | Journal of The Electrochemical Society | 37 | 30 | |
2010 | Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications | Das, Atanu; Maikap, S.; Lin, C.-H.; Tzeng, P.-J.; Tien, T.-C.; Wang, T.-Y.; Chang, L.-B.; Yang, J.-R.; JER-REN YANG | Microelectronic Engineering | 3 | 4 | |
2011 | Temperature-Dependent Physical and Memory Characteristics of Atomic-Layer-Deposited RuOx Metal Nanocrystal Capacitors | Maikap, S.; Banerjee, W.; Tien, T.C.; Wang, T.Y.; JER-REN YANG | Journal of Nanomaterials | 7 | 6 | |