公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Defect density reduction of the Al<inf>2</inf>O<inf>3</inf>/GaAs(001) interface by using H<inf>2</inf>S molecular beam passivation | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG | Surface Science | 10 | 8 | |
2010 | Effective reduction of interfacial traps in Al2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Wang, W.-E.; Dekoster, J.; Meuris, M.; Caymax, M.; Heyns, M.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 63 | 60 | |
2010 | Great reduction of interfacial traps in Al<inf>2</inf>O<inf>3</inf>/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG | Device Research Conference | 0 | 0 | |
2011 | H2S molecular beam passivation of Ge(0 0 1) | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M.M.; Caymax, M.; MINGHWEI HONG | Microelectronic Engineering | 9 | 9 | |
2013 | Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfaces | Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 24 | 22 | |
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG | Applied Physics Letters | 59 | 56 | |