公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2022 | 6 Stacked Ge0.95Si0.05nGAAFETs without Parasitic Channels by Wet Etching | Cheng C.-Y; Hsieh W.-H; Huang B.-W; Liu Y.-C; Tu C.-T; Tsai C.-E; Chueh S.-J; Chen G.-H; CHEE-WEE LIU | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 1 | 0 | |
2022 | Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching | Tu C.-T; Hsieh W.-H; Huang B.-W; Chen Y.-R; Liu Y.-C; Tsai C.-E; Chueh S.-J; CHEE-WEE LIU | IEEE Electron Device Letters | 11 | 10 | |
2020 | First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels | Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2021 | First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 ℃ | Tsai C.-E; Chen Y.-R; Tu C.-T; Liu Y.-C; Chen J.-Y; CHEE-WEE LIU | | 0 | 0 | |
2020 | First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping | Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2021 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Chen Y.-R; Chen J.-Y; Jan S.-R; Huang B.-W; Chueh S.-J; Tsen C.-J; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 3 | | |
2019 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise | Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2021 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching | Tsai C.-E; Liu Y.-C; Tu C.-T; Huang B.-W; Jan S.-R; Chen Y.-R; Chen J.-Y; Chueh S.-J; Cheng C.-Y; Tsen C.-J; Ma Y; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
2021 | Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2022 | Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching | Huang B.-W; Tsai C.-E; Liu Y.-C; Tu C.-T; Hsieh W.-H; Jan S.-R; Chen Y.-R; Chueh S.-J; Cheng C.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
2020 | Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced I on (1.7X at V OV = V DS = 0.5 V) by Ge0.85Si0.15 channels | Liu Y.-C; Huang Y.-S; Lu F.-L; Ye H.-Y; Tu C.-T; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2021 | Uniform 4-Stacked Ge0.9Sn0.1Nanosheets Using Double Ge0.95Sn0.05Caps by Highly Selective Isotropic Dry Etch | Tu C.-T; Huang Y.-S; Cheng C.-Y; Tsai C.-E; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |