https://scholars.lib.ntu.edu.tw/handle/123456789/321886
Title: | Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique | Authors: | Hwu, J.G. Wang, W.S. JENN-GWO HWU |
Issue Date: | 1986 | Journal Volume: | 40 | Journal Issue: | 1 | Start page/Pages: | 41-46 | Source: | Applied Physics A Solids and Surfaces | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0022718459&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/321886 |
DOI: | 10.1007/BF00616590 |
Appears in Collections: | 電機工程學系 |
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