https://scholars.lib.ntu.edu.tw/handle/123456789/333534
Title: | Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10 | Authors: | I. C. Chen G. Tsai HAO-HSIUNG LIN |
Issue Date: | Dec-2007 | Start page/Pages: | B4-5 | Source: | International electron devices and materials symposia | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/333534 |
Appears in Collections: | 電機工程學系 |
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