https://scholars.lib.ntu.edu.tw/handle/123456789/443433
Title: | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Authors: | Chang, Y.C. Huang, M.L. Lee, Y.J. Lee, K.Y. Lin, T.D. Hong, M. Kwo, J. Liao, C.C. Cheng, K.Y. Lay, T.S. MINGHWEI HONG |
Issue Date: | 2007 | Source: | 2007 International Semiconductor Device Research Symposium | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443433 | DOI: | 10.1109/ISDRS.2007.4422243 |
Appears in Collections: | 物理學系 |
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