https://scholars.lib.ntu.edu.tw/handle/123456789/607225
標題: | First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications | 作者: | Chang S.-W. Lu T.-H. Yang C.-Y. Yeh C.-J. Huang M.-K Meng C.-F. Chen P.-J. Chang T.-H. Chang Y.-S. Jhu J.-W. Hong T.-C. Ke C.-C. Yu X.-R. Lu W.-H. Baig M.A. Cho T.-C. Sung P.-J. Su C.-J. Hsueh F.-K. Chen B.-Y. Hu H.-H. Wu C.-T. Lin K.-L. Ma W.C.-Y. Lu D.D. Kao K.-H. Lee Y.-J. Lin C.-L. Huang K.-P. Chen K.-M. Li Y. Samukawa S. Chao T.-S. Huang G.-W. Wu W.-F. Lee W.-H. JIUN-YUN LI Shieh J.-M. Tarng J.-H. Wang Y.-H. Yeh W.-K. |
關鍵字: | Complementary field-effect-transistor (CFET);heterogeneous integration;hybrid complementary metal-oxide-semiconductor (Hybrid CMOS);indium gallium zinc oxide (IGZO) Radio Frequency Integrated Circuit (RFIC);Inverters;Logic gates;oxide semiconductor (OS);Radio frequency;static random access memory (SRAM);Surface treatment;Threshold voltage;Tin;Transistors;vertically stacked. | 公開日期: | 2022 | 卷: | 69 | 期: | 4 | 起(迄)頁: | 2101 - 2107 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | In this article, heterogeneous complementary field-effect-transistor (CFET) constructed by vertically stacking amorphous indium gallium zinc oxide (a-IGZO) n-channel on poly-Si p-channel with their own dielectric layer and work function metal gate inverters were demonstrated. Meanwhile, high-frequency IGZO radio frequency (RF) devices with poly-Si as guard ring material simultaneously were fabricated in the same process. High |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123690962&doi=10.1109%2fTED.2021.3138947&partnerID=40&md5=23d2dbe82118539a07d536321d764079 https://scholars.lib.ntu.edu.tw/handle/123456789/607225 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2021.3138947 |
顯示於: | 電機工程學系 |
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