https://scholars.lib.ntu.edu.tw/handle/123456789/626459
標題: | Si Metal-Oxide-Semiconductor and Si/SiGe Heterostructure Quantum Dots | 作者: | Wu, Yu Jui Chiang, Chih Ying Tsao, Hung Yu Li, Tsung Ying Wang, Tz Ming Lin, Min Jui Liu, Chia You Yeh, Ching Chen Yang, Cheng Hsueh CHI-TE LIANG JIUN-YUN LI |
公開日期: | 1-一月-2022 | 來源出版物: | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 會議論文: | 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 | 摘要: | In this work, we demonstrate Coulomb blockade for both Si metal-oxide-semiconductor (MOS) nanowire and Si/SiGe heterostructure finger-type quantum dots (QDs). Clear quantum oscillations of the QD conductance were observed at temperatures of 23 mK to 1.5 K. Charge stability diagrams with unambiguous boundaries were also demonstrated at 23 mK. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/626459 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85130425647&origin=inward |
ISBN: | 9781665409230 | DOI: | 10.1109/VLSI-TSA54299.2022.9770981 | SDG/關鍵字: | Dielectric devices; Heterojunctions; Metals; MOS devices; Nanocrystals; Oxide semiconductors; Silicon compounds; Transistors; Charge stability; Quantum oscillations; Si/SiGe heterostructures; Stability diagram; Semiconductor quantum dots |
顯示於: | 物理學系 |
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