公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | 15th OptoElectronics and Communications Conference, OECC2010 | | | |
2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
2017 | Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure with Concentric Circular Electrodes Controlled by Designed Substrate Bias | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 3 | |
2015 | Tunneling current induced frequency dispersion in the C-V behavior of ultra-thin oxide MOS capacitors | JENN-GWO HWU | ECS Transactions | 3 | 0 | |
2019 | Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring | H.J.Li; C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2019 | Two Capacitance States Memory Characteristic in Metal-oxide-semiconductor (MOS) Structure Controlled by An Outer MOS Gate Ring | H.J.Li; C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2019 | Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring | Li, H.-J.; Yang, C.-F.; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2012 | Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO 2 | JENN-GWO HWU | Applied Physics Letters | 21 | 20 | |
2016 | Two States Phenomenon Induced by Neighboring Device Coupling Effect in MIS(p) Tunnel Current | W.C.Kao; J.Y.Chen; J.G,Hwu; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
2011 | Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate | Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
2012 | Two-state trap-assisted tunneling current characteristics in Al 2O 3/SiO 2/SiC structures with ultrathin dielectrics | JENN-GWO HWU | IEEE Transactions on Nanotechnology | 3 | 3 | |
2020 | Ultra-Low Subthreshold Swing in Gated MIS(p) Tunnel Diodes with Engineered Oxide Local Thinning Layers | Chiang, T.-H.; JENN-GWO HWU | IEEE Transactions on Electron Devices | | 3 | |
2001 | Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal | Chen, Y.-C.; Lee, C.-Y.; JENN-GWO HWU | Solid-State Electronics | 12 | 12 | |
2002 | Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing | Ting, C.-C.; Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 23 | |
2004 | Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation | JENN-GWO HWU | IEEE Transactions on Electron Devices | 31 | 28 | |
2008 | Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system | Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 3 | 2 | |
2003 | Using anodization to oxidize ultrathin aluminum film for high-k gate dielectric application | JENN-GWO HWU | Journal of the Electrochemical Society | 10 | 9 | |
2017 | Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application | J.G.Hwu; W.T.Hou; C.S.Liao; JENN-GWO HWU | WCSM 2017, 3rd Annual World Congress of Smart Materials | | | |
2017 | Voltage Drop Modulation and Fringing Field Effect Mechanism in MIS(p) Tunnel Diode for Sensing Application | J.G.Hwu; W.T.Hou; C.S.Liao; JENN-GWO HWU | WCSM 2017, 3rd Annual World Congress of Smart Materials | | | |