公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science & Technology B | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 | Chang, P; Lee, WC; Huang, ML; Lee, YJ; MINGHWEI HONG ; Kwo, J | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | | | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; MINGHWEI HONG ; Kwo, J | Solid-State Electronics | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2011 | Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial film | Hung, HY; Huang, SY; Chang, P; Lin, WC; Liu, YC; Lee, SF; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2010 | Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films | Huang, SY; Hung, HY; Chang, P; Lin, WC; Lee, SF; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2007 | Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) | Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; MINGHWEI HONG ; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others | Applied Physics Letters | | | |
2007 | Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures | Hsu, YL; Lee, YJ; Chang, YH; Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2010 | Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001) | Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; MINGHWEI HONG | Crystal Growth & Design | | | |
2006 | Structural Investigation of Epitaxial HfO2 Films by X-ray Scattering | Hsu, CH; Yang, ZK; Chang, P; MINGHWEI HONG ; Kwo, J; Huang, Chih-Mao; Lee, Hsin-Yi | SRMS-5 Conference | | | |
2006 | Structure of HfO2 films epitaxially grown on GaAs (001) | Hsu, C-H; Chang, P; Lee, WC; Yang, ZK; Lee, YJ; MINGHWEI HONG ; Kwo, J; Huang, CM; Lee, HY | Applied Physics Letters | | | |
2004 | Structure of Sc 2 O 3 Films Epitaxially Grown on $α$-Al 2 O 3 (111) | Kortan, AR; MINGHWEI HONG ; Kwo, J; Chang, P; Chen, CP; Mannaerts, JP; Liou, SH | MRS Proceedings | | | |
2008 | Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric | Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; MINGHWEI HONG ; Kwo, J | 2008 International Symposium on VLSI Technology, Systems and Applications | | | |
2005 | Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al̃ 2Õ 3 | Huang, ML; Chang, YC; Chang, CH; Lee, YJ; Chang, P; Kwo, J; Wu, TB; MINGHWEI HONG | Applied Physics Letters | | | |
2007 | The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface | Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2005 | Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface | Huang, YL; Chang, P; Yang, ZK; Lee, YJ; Lee, HY; Liu, HJ; Kwo, J; Mannaerts, JP; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy | Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; MINGHWEI HONG ; Kwo, J | Applied Physics A | | | |