公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2023 | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | Chen, Yu Rui; Liu, Yi Chun; Zhao, Zefu; Hsieh, Wan Hsuan; Lee, Jia Yang; Tu, Chien Te; Huang, Bo Wei; Wang, Jer Fu; Chueh, Shee Jier; Xing, Yifan; Chen, Guan Hua; Chou, Hung Chun; Woo, Dong Soo; Lee, M. H.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
2018 | First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching | Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2012 | First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO <inf>2</inf> interface | CHEE-WEE LIU ; Chang, H.-C.; Lu, S.-C.; Chou, T.-P.; Lin, C.-M.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2012 | First-principles study of GeO <inf>2</inf>/Ge interfacial traps and oxide defects | CHEE-WEE LIU ; Lu, S.-C.; Chang, H.-C.; Chou, T.-P.; CHEE-WEE LIU | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | | | |
2009 | Flexible Ge-on-polyimide detectors | CHEE-WEE LIU ; Ho, W.S.; Dai, Y.-H.; Deng, Y.; Lin, C.-H.; Chen, Y.-Y.; Lee, C.-H.; CHEE-WEE LIU | Applied Physics Letters | | | |
2010 | Flexible single-crystalline Ge p-channel thin-film transistors with schottky-barrier source/drain on polyimide substrates | CHEE-WEE LIU ; Hsu, W.; Peng, C.-Y.; Lin, C.-M.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2019 | Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08 | Galluccio E; Petkov N; Mirabelli G; Doherty J; Lin S.-Y; Lu F.-L; Liu C.W; Holmes J.D; Duffy R.; CHEE-WEE LIU | Thin Solid Films | | | |
2005 | Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing | Liao, K.F.; Chen, P.S.; Lee, S.W.; Chen, L.J.; CHEE-WEE LIU | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | | | |
2008 | Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Lee, M.H.; CHEE-WEE LIU | Applied Surface Science | | | |
2005 | Formation of SiCH <inf>6</inf>-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Tsai, M.-J.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2000 | Formation of silicon surface gratings with high-pulse-energy ultraviolet laser | Chen, C.-Y.; Ma, K.-J.; Lin, Y.-S.; Liu, C.-W.; Hsu, C.-W.; Chao, C.-Y.; Gurtler, S.; CHEE-WEE LIU ; CHIH-CHUNG YANG | Journal of Applied Physics | 3 | 3 | |
2018 | Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields | Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | JETP Letters | | | |
2012 | Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors | CHEE-WEE LIU ; Lu, T.M.; Pan, W.; Tsui, D.C.; Lee, C.-H.; CHEE-WEE LIU | Physical Review B - Condensed Matter and Materials Physics | | | |
2016 | Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se<inf>2</inf> solar modules | Zhu, X.; Cheng, T.-H.; CHEE-WEE LIU | Electronic Materials Letters | | | |
2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
2014 | Gate-all-around Ge FETs | CHEE-WEE LIU ; Liu, C.W.; Chen, Y.-T.; Hsu, S.-H.; CHEE-WEE LIU | ECS Transactions | | | |
2014 | Ge gate-all-around FETs on Si | Liu, C.W.; Wong, I.-H.; Chen, Y.-T.; Tu, W.-H.; Huang, S.-H.; Hsu, S.-H.; CHEE-WEE LIU | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | | | |
2012 | Ge out diffusion effect on SiGe nanoring formation | CHEE-WEE LIU ; Tu, W.-H.; Huang, S.-H.; CHEE-WEE LIU | Journal of Applied Physics | | | |