公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2019 | Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors | Chang, L.-C.; Yin, S.-Y.; CHAO-HSIN WU | Journal of Physics D: Applied Physics | | | |
2022 | Effect of Chirped Dispersion and Modal Partition Noise on Multimode VCSEL Encoded with NRZ-OOK and PAM-4 Formats | Lo W.-C; Wu W.-L; Cheng C.-H; Wang H.-Y; Tsai C.-T; Wu C.-H; CHAO-HSIN WU ; GONG-RU LIN | IEEE Journal of Selected Topics in Quantum Electronics | 7 | 7 | |
2017 | Efficient Heat Dissipation of Uncooled 400-Gbps (16×25-Gbps) Optical Transceiver Employing Multimode VCSEL and PD Arrays | Tien-Tsorng Shih et al.; Yu-Chieh Chi; Ruei-Nian Wang; CHAO-HSIN WU ; JIAN-JANG HUANG ; Jau-Ji Jou; TAI-CHENG LEE ; Hao-Chung Kuo; GONG-RU LIN ; Wood-Hi Cheng | Scientific Reports | 13 | 10 | |
2009 | Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser | CHAO-HSIN WU ; Then, H.W.; Wu, C.H.; Walter, G.; Feng, M.; Holonyak, N.; CHAO-HSIN WU | Applied Physics Letters | | | |
2011 | Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission | CHAO-HSIN WU ; Tan, F.; Wu, C.H.; Feng, M.; Holonyak Jr. N.; CHAO-HSIN WU | Applied Physics Letters | | | |
2016 | Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivation | Chang, L.-C.; Tsai, T.-H.; Jiang, Y.-H.; CHAO-HSIN WU | 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 | | | |
2016 | Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth | Wu, C.-R.; Chang, X.-R.; Chu, T.-W.; Chen, H.-A.; Wu, C.-H.; Lin, S.-Y.; CHAO-HSIN WU | Nano Letters | | | |
2018 | Evaluation and selection of materials for particulate matter MEMS sensors by using hybrid MCDM methods | Huang, C.-Y.; Chung, P.-H.; Shyu, J.Z.; Ho, Y.-H.; Wu, C.-H.; Lee, M.-C.; Wu, M.-J.; CHAO-HSIN WU | Sustainability (Switzerland) | | | |
2018 | Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors | Chang, H.-M.; Fan, K.-L.; Charnas, A.; Ye, P.D.; Lin, Y.-M.; Wu, C.-I.; CHIH-I WU ; CHAO-HSIN WU | Journal of Physics D: Applied Physics | 14 | 14 | |
2007 | Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping | CHAO-HSIN WU ; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU | Applied Physics Letters | | | |
2023 | Fabrication AlGaN/GaN Fin-HEMTs with Hexagon Nano-scale Fin Channel | Lu, Yu Hsuan; Chang, Yu Cheng; Lu, Wei Ju; Lin, Feng Ting; Xu, Bo Hsun; CHAO-HSIN WU | 2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | | | |
2016 | Fabrication and characterization of InGaAs fin structure high electron mobility transistors | Chang, C.-M.; Chang, L.-C.; CHAO-HSIN WU | 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 | | | |
2017 | Few-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiber | Kao, H.-Y.; Chi, Y.-C.; Tsai, C.-T.; Leong, S.-F.; Peng, C.-Y.; Wang, H.-Y.; Huang, J.J.; Jou, J.-J.; Shih, T.-T.; Kuo, H.-C.; Cheng, W.-H.; Wu, C.-H.; JIAN-JANG HUANG ; GONG-RU LIN ; CHAO-HSIN WU | Photonics Research | 38 | 30 | |
2020 | A Four-Port Model of Light-Emitting Transistors for Circuit Simulation and Application | Yang L; Chang S.-W; CHAO-HSIN WU | IEEE Transactions on Electron Devices | | | |
2005 | Gain-measurement of broadband quantum dot SOA by two-section technique | CHAO-HSIN WU ; CHING-FUH LIN ; Su, Y.-S.; Chang, W.-C.; Wu, C.-H.; Lin, C.-F.; CHAO-HSIN WU ; CHING-FUH LIN | Conference on Lasers and Electro-Optics Europe | | | |
2017 | Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance | Chang, H.-M.; Charnas, A.; Lin, Y.-M.; Ye, P.D.; Wu, C.-I.; CHIH-I WU ; CHAO-HSIN WU | Scientific Reports | 15 | 12 | |
2017 | The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment | Wu, C.-R.; Chang, X.-R.; Wu, C.-H.; Lin, S.-Y.; CHAO-HSIN WU | Scientific Reports | | | |
2020 | High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer | Luo Y.J; Sanyal I; Tzeng W.-C; Ho Y.-L; Chang Y.-C; Hsu C.-C; Chyi J.-I; CHAO-HSIN WU | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 | | | |
2020 | High fmax × LG Product of AlGaN/GaN HEMTs on Silicon with Thick Rectangular Gate | Chang L.-C; Hsu K.-C; Ho Y.-T; Tzeng W.-C; Ho Y.-L; CHAO-HSIN WU | IEEE Journal of the Electron Devices Society | | | |
2017 | High Performance MoS2 TFT using Graphene Contact First Process | C. S. Chang Chien; H. M. Chang; W. T. Lee; M. R. Tang; CHAO-HSIN WU ; SI-CHEN LEE | AIP Advance | 5 | 4 | |