Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2010 | dc and rf characteristics of self-aligned inversion-channel In0. 53 Ga0. 47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3 (Gd2O3) as gate dielectrics | Lin, TD; Chang, P; Chiu, HC; MINGHWEI HONG ; Kwo, J; Lin, YS; Hsu, Shawn SH | Journal of Vacuum Science & Technology B | | | |
2009 | Depletion-mode In 0.2 Ga 0.8 As/GaAs MOSFET with molecular beam epitaxy grown Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, CA; Lin, TD; Chiang, TH; Chiu, HC; Chang, P; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As | Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; MINGHWEI HONG ; Lin, CA; Kwo, J | Journal of Vacuum Science & Technology B | | | |
2009 | Enhancement Mode InGaAs MOSFETs | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Kwo, JR; Tsai, W; MINGHWEI HONG | Meeting Abstracts | | | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth | Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric | Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; MINGHWEI HONG ; Kwo, J; Tsai, W; Wang, YC | Applied Physics Letters | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; MINGHWEI HONG | ECS Transactions | | | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics | Chang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; MINGHWEI HONG ; Kwo, J; Hong, JM; Tsai, CC | 2008 Device Research Conference | | | |
2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; MINGHWEI HONG ; Kwo, J; Hong, JM; Tsai, CC | Applied Physics Letters | | | |
2009 | Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; MINGHWEI HONG ; Kwo, J; Hong, JM; Tsai, CC | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2011 | Low interfacial density of states around midgap in MBE-Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As | Lin, CA; Chiu, HC; Chiang, TH; Chang, YC; Lin, TD; Kwo, J; Wang, W-E; Dekoster, J; Heyns, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics | Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; MINGHWEI HONG ; Kwo, J; Tsai, W | Device Research Conference, 2008 | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; MINGHWEI HONG ; Kwo, J | Solid-State Electronics | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2007 | Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN | Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; MINGHWEI HONG ; Chiu, YN; Kwo, J; Wang, Yeong-Her; others | | | | |
2005 | wo-stage community-based screening model for estimating prevalence of diabetic polyneuropathy (KCIS No. 6) | Hsu, WC; Chiu, YH; Chiu, HC; Liou, HH; Jeng, YC; Chen, THH | Neuroepidemiology | | | |