公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process | Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 15 | 15 | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
2014 | Single crystal Gd<inf>2</inf>O<inf>3</inf> epitaxially on GaAs(111)A | Chiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG | CrystEngComm | 8 | 9 | |
2015 | Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization | Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 20 | 20 | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 35 | 40 | |
2011 | Strong crystal anisotropy of magneto-transport property in Fe<inf>3</inf>Si epitaxial film | Hung, H.Y.; Huang, S.Y.; Chang, P.; Lin, W.C.; Liu, Y.C.; Lee, S.F.; Hong, M.; SSU-YEN HUANG ; MINGHWEI HONG | Journal of Crystal Growth | 7 | 6 | |
2015 | Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping | Wu, C. N.; Lin, Y. H.; Fanchiang, Y. T.; Hung, H. Y.; Lin, H. Y.; Lin, P. H.; Lin, J. G. ; Lee, S. F.; Hong, M.; MINGHWEI HONG | Journal of Applied Physics | 10 | 11 | |
2018 | Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi <inf>2</inf> Se <inf>3</inf> /yttrium iron garnet heterostructures | Fanchiang, Y.T.; Chen, K.H.M.; Tseng, C.C.; Chen, C.C.; Cheng, C.K.; Yang, S.R.; Wu, C.N.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | Nature Communications | 57 | 54 | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Applied Physics Letters | 112 | 90 | |
2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG | Journal of Applied Physics | 34 | 32 | |
2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 13 | |
2010 | Structural characteristics of nanometer thick Gd<inf>2</inf>O<inf>3</inf> films grown on GaN (0001) | Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Crystal Growth and Design | 14 | 12 | |
2000 | Structural modifications of the Gd<inf>2</inf>O<inf>3</inf>(110) films on GaAs(100) | Steiner, C.; Bolliger, B.; Erbudak, M.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Physical Review B - Condensed Matter and Materials Physics | 10 | 10 | |
2000 | Structure of epitaxial Gd<inf>2</inf>O<inf>3</inf> films and their registry on GaAs(100) substrates | Bolliger, B.; Erbudak, M.; Hong, M.; Kwo, J.; Kortan, A.R.; Mannaerts, J.P.; MINGHWEI HONG | Surface and Interface Analysis | 8 | | |
2002 | Structure of Gd<inf>2</inf>O<inf>3</inf> films epitaxially grown on GaAs(100) and GaN(0001) surfaces | Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG | Surface and Interface Analysis | 18 | 18 | |
2006 | Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001) | Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG | Applied Physics Letters | 25 | 26 | |
2006 | Structure of Sc <inf>2</inf>O <inf>3</inf> films epitaxially grown on 帢-Al <inf>2</inf>O <inf>3</inf> (0001) | Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG | Applied Physics Letters | | 0 | |
2017 | Surface electronic structure of epi germanium (001)-2 ? 1 | Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 17 | 14 | |
2020 | Surface electronic structure of Si<inf>1-x</inf>Ge <inf>x</inf>(001)-2 × 1: A synchrotron radiation photoemission study | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 6 | 6 | |