公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Optimization of a saddle-like FinFET by device simulation for sub-50nm DRAM application | CHEE-WEE LIU ; Chang, H.-C.; Kuo, P.-S.; Peng, C.-Y.; Chen, Y.-T.; Chen, W.-Y.; CHEE-WEE LIU | 2009 International Semiconductor Device Research Symposium, ISDRS '09 | | | |
2008 | PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer | Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee | IEEE Electron Device Letters | | | |
2008 | PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiN<inf>x</inf> stressing layer | CHEE-WEE LIU ; Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chen, K.-M.; Huang, S.-Y.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2008 | Polarity change of threshold voltage shifts for n-channel polycrystalline silicon thin-film transistors stressed by negative gate bias | CHEE-WEE LIU ; Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | ECS Transactions | | | |
2008 | Process strain induced by nickel germanide on (100) Ge substrate | CHEE-WEE LIU ; Peng, C.-Y.; YI-HSUAN YANG ; Lin, C.-M.; Yang, Y.-J.; Huang, C.-F.; CHEE-WEE LIU | International Conference on Solid-State and Integrated Circuits Technology, ICSICT | | | |
2018 | RC Time Constant and Resistance Reduced VCSEL for Broadband QAM-OFDM | Wu, W.-L.; Huang, C.-Y.; Wang, H.-Y.; Wu, C.-H.; Peng, C.-Y.; Kuo, H.-C.; Wu, C.-H.; GONG-RU LIN ; CHAO-HSIN WU | European Conference on Optical Communication, ECOC | 0 | 0 | |
2009 | Si/ Si<inf>0.2</inf>Ge<inf>0.8</inf> /Si quantum well Schottky barrier diodes | CHEE-WEE LIU ; Kuo, P.-S.; Peng, C.-Y.; Lee, C.-H.; Shen, Y.-Y.; Chang, H.-C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2008 | SiGe/Si quantum-dot infrared photodetectors with δ doping | Lin, C.-H.; Yu, C.-Y.; Chang, C.-C.; Lee, C.-H.; Yang, Y.-J.; Ho, W.S.; Chen, Y.-Y.; Liao, M.H. ; Cho, C.-T.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Transactions on Nanotechnology | 6 | 6 | |
2006 | Simultaneous block and I/O buffer floorplanning for flip-chip design | Peng, C.-Y.; Chao, W.-C.; Wang, J.-H.; YAO-WEN CHANG | Asia and South Pacific Design Automation Conference, ASP-DAC | 14 | | |
2010 | Single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on flexible polyimide substrates | CHEE-WEE LIU ; Hsu, W.; Lin, C.-M.; Peng, C.-Y.; Chen, Y.-Y.; Chen, Y.-T.; Ho, W.-S.; CHEE-WEE LIU | International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 | | | |
2018 | Single-mode VCSEL for pre-emphasis PAM-4 transmission up to 64 Gbit/s over 100�V300 m in OM4 MMF | Kao, H.-Y.; Tsai, C.-T.; Leong, S.-F.; Peng, C.-Y.; Chi, Y.-C.; Wang, H.-Y.; Kuo, H.-C.; Wu, C.-H.; Cheng, W.-H.; GONG-RU LIN ; CHAO-HSIN WU | Photonics Research | 33 | 31 | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | CHEE-WEE LIU ; Liao, M.H.; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2006 | Strained Pt Schottky diodes on n-type Si and Ge | Liao, M.H. ; Chang, S.T.; Kuo, P.S.; Wu, H.-T.; Peng, C.-Y.; Liu, C.W. | Third International SiGe Technology and Device Meeting | 0 | | |
2008 | Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors | CHEE-WEE LIU ; Huang, C.-F.; Peng, C.-Y.; Yang, Y.-J.; Sun, H.-C.; Chang, H.-C.; Kuo, P.-S.; Chang, H.-L.; Liu, C.-Z.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2017 | A study of the competitive multiple hydrogen bonding effect and its associated excited-state proton transfer tautomerism | Chen, Y.-T.; Wu, P.-J.; Peng, C.-Y.; Shen, J.-Y.; Tsai, C.-C.; Hu, W.-P.; Chou, P.-T. | Physical Chemistry Chemical Physics | 20 | 19 | |
2007 | Transport mechanism of SiGe dot MOS tunneling diodes | Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; Liu, C.W. | IEEE Electron Device Letters | | | |
2007 | Transport mechanism of SiGe dot MOS tunneling diodes | CHEE-WEE LIU ; Kuo, P.-S.; Lin, C.-H.; Peng, C.-Y.; Fu, Y.-C.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2014 | A W-band high LO-to-RF isolation triple cascode mixer with wide if bandwidth | Kao, J.-C.; Lin, K.-Y.; Chiong, C.-C.; Peng, C.-Y.; KUN-YOU LIN ; HUEI WANG | IEEE Transactions on Microwave Theory and Techniques | 20 | 13 | |