公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1988 | Scanning electron microscope identification of weak links in superconducting thin films | Monroe, Don; Brocklesby, WS; Farrow, RC; Hong, M; Liou, Sy\\_Hwang; MINGHWEI HONG | Applied Physics Letters | | | |
2003 | Schottky barrier height and interfacial state density on oxide-GaAs interface | Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG | Journal of applied physics | 18 | 16 | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; Hong, M; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Self-aligned inversion n-channel In 0.2 Ga 0.8 As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga 2 O 3 (Gd 2 O 3) dielectric | Chen, CP; Lin, TD; Lee, YJ; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics | Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Device Research Conference, 2008 | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG | Solid-State Electronics | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2011 | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Semiconductor-insulator interfaces | Hong, M; Liu, CT; Reese, H; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | | | |
2014 | Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs | Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | | | |
2002 | Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100) | Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | | | |
1991 | Short pulse generation by electrical gain switching of vertical cavity surface emitting laser | Lin, James; Gamelin, JK; Wang, S; Hong, M; Mannaerts, JP; MINGHWEI HONG | Electronics Letters | | | |
2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1998 | Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG | MRS Proceedings | | | |
2000 | Single crystal rare earth oxides epitaxially grown on GaN | Hong, M; Kortan, AR; Kwo, J; Mannaerts, JP; Lee, CM; Chyi, JL; MINGHWEI HONG | IEEE International Symposium on Compound Semiconductors, 2000 | | | |
1987 | Single Crystal Superconducting Y1Ba2Cu3O7- x Oxide Films by Molecular Beam Epitaxy | Kwo, J; Hong, M; Fleming, RM; Hsieh, TC; Liou, SH; Davidson, BA; MINGHWEI HONG | Novel Superconductivity | | | |
2015 | Single-crystal atomic layer deposited Y 2 O 3 on GaAs (001)-growth, structural, and electrical characterization | Wu, SY; Chen, KH; Lin, YH; Cheng, CK; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2022 | Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: Structural, strain, magnetic, and spin transport properties | Guo, MX; CHIA-KUEN CHENG ; Liu, YC; Wu, CN; Chen, WN; Chen, TY; Wu, CT; CHIH-HUNG HSU; Zhou, SQ; Chang, CF; Tjeng, LH; Lee, SF; Pai, CF; Hong, M; Kwo, J | PHYSICAL REVIEW MATERIALS | 6 | 4 | |
2002 | Single-crystal GaN/Gd2O3/GaN heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2015 | Single-Crystal Y2O3 Epitaxially on GaAs (001) and (111) Using Atomic Layer Deposition | Lin, YH; Cheng, CK; Chen, KH; Fu, CH; Chang, TW; Hsu, CH; Kwo, J; Hong, M; MINGHWEI HONG | Materials | | | |