公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | Nanoprojection lithography using self-assembled interference modules for manufacturing plasmonic gratings | Chuang, F.-T.; Chen, P.-Y.; Jiang, Y.-W.; Farhat, M.; Chen, H.-H.; Chen, Y.-C.; Lee, S.-C.; SI-CHEN LEE | IEEE Photonics Technology Letters | 2 | 2 | |
2010 | Narrow bandwidth midinfrared waveguide thermal emitters | Wu, Y.-T.; Chang, Y.-T.; Chen, H.-H.; Huang, H.-F.; Tzuang, D.-C.; Jiang, Y.-W.; Chang, P.-E.; Lee, S.-C.; SI-CHEN LEE | IEEE Photonics Technology Letters | 21 | 20 | |
1998 | The naturally occurring PKC inhibitor sphingosine and tumor promoter phorbol ester potentially induce tyrosine phosphorylation/activation of oncogenic proline-directed protein kinase FA/GSK-3alpha in a common signalling pathway | Lee, S.-C.; Kuan, C.-Y.; Wen, Z.-D. ; Yang, S.-D. | Journal of Protein Chemistry | | 7 | |
1988 | New model for the Staebler-Wronski effect in an amorphous silicon hydrogen alloy | Tzeng, W.-J.; Lee, S.-C.; SI-CHEN LEE | Applied Physics Letters | 4 | 4 | |
1994 | A new process for liquid phase deposition of silicon oxide and its application in amorphous silicon thin film transisitor | Chou, J.-S.; Chen, M.-S.; Lee, S.-C.; SI-CHEN LEE | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 0 | 0 | |
1993 | Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched In <inf>0.53</inf> Ga <inf>0.47</inf> As epilayers grown on GaAs substrates | Chang, S.-Z.; Lee, S.-C.; Shiao, H.-P.; Lin, W.; Tu, Y.-K.; SI-CHEN LEE | Applied Physics Letters | 2 | 3 | |
2016 | Observation of "wired" cell communication over 10- μ m and 20- μ m poly(dimethylsiloxane) barriers in tetracycline inducible expression systems | Kuo, C.-T.; Chi, C.-Y.; Wu, P.-Y.; Chuang, F.-T.; Lin, Y.-C.; Liu, H.-K.; Huang, G.-S.; Tsai, T.-C.; Wo, A.M.; Lee, H.; Lee, S.-C.; SI-CHEN LEE ; ANDREW WO ; H. Lee | Journal of Applied Physics | 3 | 3 | |
1993 | Observation of deep donor center related tunneling peak in the Al <inf>x</inf>Ga<inf>1-x</inf>As/AlAs/Al<inf>x</inf>Ga<inf>1-</inf><inf>x</inf>As/AlAs/Al<inf>x</inf>Ga<inf>1-x</inf>As (0.40?x?0.50) resonant tunneling diodes | Shieh, T.-H.; Lee, S.-C.; SI-CHEN LEE | Applied Physics Letters | 0 | 0 | |
2007 | Observation of Fabry-P?rot-type surface plasmon on Ag film with perforated short-range 3×3 hole array arranged in long-range periodic structure | Chang, Y.-T.; Chuang, T.-H.; Tsai, M.-W.; Lai, M.-J.; Lee, S.-C.; SI-CHEN LEE | Applied Physics Letters | 6 | 3 | |
2013 | Observation of room-temperature ballistic thermal conduction persisting over 8.3 mm in SiGe nanowires | Hsiao, T.-K.; Chang, H.-K.; Liou, S.-C.; Chu, M.-W. ; Lee, S.-C.; SI-CHEN LEE | Nature Nanotechnology | 151 | 147 | |
1993 | Observation of X-band electron quantum interference and transport through virtual states in Al <inf>x</inf> Ga <inf>1-x</inf> As/AlAs heterostructures | Shieh, T.-H.; Wu, C.-C.; Lee, S.-C.; SI-CHEN LEE | Journal of Applied Physics | 0 | 0 | |
2010 | Optical characteristics of Al/Si structure and Ag/Al <inf>2</inf> O <inf>3</inf> /Ag plasmonic thermal emitter with square and hexagonal lattice | Chang, Y.-T.; Chen, H.-H.; Tung, I.-C.; Huang, H.-F.; Chang, P.-E.; Lee, S.-C.; SI-CHEN LEE | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings | 1 | 0 | |
1989 | Origin of Boron Contamination of the Intrinsic Amorphous Silicon Hydrogen Alloys in Glow Discharge System | Tsai, H.-K.; Tzeng, W.-J.; Lee, S.-C.; SI-CHEN LEE | Journal of the Electrochemical Society | 3 | 3 | |
1984 | Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor | Lee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 73 | 67 | |
1994 | Oxidation of silicon nitride prepared by plasma-enhanced chemical vapor deposition at low temperature | Liao, W.-S.; Lin, C.-H.; Lee, S.-C.; SI-CHEN LEE | Applied Physics Letters | 90 | 85 | |
2014 | Paper memory by all printing technology | Lien, D.-H.; Kuo, Z.-K.; Huang, T.-H.; Liao, Y.-C.; Lee, S.-C.; He, H.; YING-CHIH LIAO ; SI-CHEN LEE | Symposium on VLSI Technology | | | |
2015 | Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition | Lin, M.-Y.; Wang, C.-H.; Chang, S.-W.; Lee, S.-C.; Lin, S.-Y.; SI-CHEN LEE | Journal of Physics D: Applied Physics | 16 | 16 | |
1983 | Percolation process in high-conductivity phosphorus-doped amorphous SI:H:F alloys | Lee, S.-C.; Chao, S.-S.; SI-CHEN LEE | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers, Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 1 | 0 | |
2012 | Performance improvement of AlGaAs/GaAs QWIP by NH <inf>3</inf> plasma treatment | Lee, J.-H.; Chang, C.-Y.; Li, C.-H.; Lin, S.-Y.; Lee, S.-C.; SI-CHEN LEE | IEEE Journal of Quantum Electronics | 6 | 5 | |
2002 | Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots | Chen, S.-D.; Tsai, C.-Y.; Lee, S.-C.; SI-CHEN LEE | IEEE Conference on Nanotechnology | 1 | 0 | |