公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 | Chang, P; Lee, WC; Huang, ML; Lee, YJ; MINGHWEI HONG ; Kwo, J | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | | | |
2008 | Population stratification bias in case-only study for gene-environment interactions. | Wang, LY; Lee, WC | Am J Epidemiol | | | |
2002 | A randomized controlled trial on therapeutic effects for recurrent ischemic stroke with electroacupuncture | Hsieh, RL; Li, TC; Yen, YC; Lee, WC | J Rehab Med Assoc,30 | | | |
2012 | Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition | Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
2012 | Room temperature ferromagnetic behavior in cluster free, Co doped Y2O3 dilute magnetic oxide films | Wu, CN; Huang, SY; Lee, WC; Chang, YH; Wu, TS; Soo, YL; MINGHWEI HONG ; Kwo, J | Applied Physics Letters | | | |
2011 | Room temperature ferromagnetism in cluster free, Co doped Y2 O 3 dilute magnetic oxide | Wu, CN; Huang, SY; Lin, WC; Wu, TS; Soo, YL; Lee, WC; Lee, YJ; Chang, YH; Hong, M; Kwo, J | APS Meeting Abstracts | | | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2008 | Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2007 | Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) | Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; MINGHWEI HONG ; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others | Applied Physics Letters | | | |
2006 | Structure of HfO2 films epitaxially grown on GaAs (001) | Hsu, C-H; Chang, P; Lee, WC; Yang, ZK; Lee, YJ; MINGHWEI HONG ; Kwo, J; Huang, CM; Lee, HY | Applied Physics Letters | | | |
2002 | Testing for Candidate gene linkage disequilibrium using a dense array of single nucleotide polymorphisms in case-parents studies | Lee, WC | Epidemiology | | | |
2011 | The growth of an epitaxial ZnO film on Si (111) with a Gd2O3 (Ga2O3) buffer layer | Lin, BH; Liu, WR; Yang, S; Kuo, CC; Hsu, C-H; Hsieh, WF; Lee, WC; Lee, YJ; MINGHWEI HONG ; Kwo, J | Crystal Growth & Design | | | |
2012 | The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a $γ$-Al 2 O 3 buffer layer | Liu, W-R; Lin, BH; Yang, S; Kuo, CC; Li, Y-H; Hsu, C-H; Hsieh, WF; Lee, WC; MINGHWEI HONG ; Kwo, J | CrystEngComm | | | |
2007 | The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface | Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2012 | Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111) | Liu, W-R; Lin, BH; Kuo, CC; Lee, WC; MINGHWEI HONG ; Kwo, J; Hsu, C-H; Hsieh, WF | CrystEngComm | | | |
2008 | Time dependent preferential sputtering in the HfO 2 layer on Si (100) | Chang, SJ; Lee, WC; Hwang, J; MINGHWEI HONG ; Kwo, J | Thin Solid Films | | | |
2008 | Transmission electron microscopy characterization of HfO2/GaAs (001) heterostructures grown by molecular beam epitaxy | Liou, SC; Chu, M-W; Chen, CH; Lee, YJ; Chang, P; Lee, WC; MINGHWEI HONG ; Kwo, J | Applied Physics A | | | |
1998 | Underregistration of neonatal deaths: an empirical study of the accuracy of infantile vital statistics in Taiwan | Chen, LM; Sun, CA; Wu, DM; Shen, MH; Lee, WC | Journal of Epidemiology and Community Health | | | |
2013 | Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y 2 O 3-buffered Si (111) | Kuo, CC; Liu, W-R; Lin, BH; Hsieh, WF; Hsu, C-H; Lee, WC; MINGHWEI HONG ; Kwo, J | Optics express | | | |