公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | A comprehensive study of inversion current in MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2003 | A high efficient 820 nm MOS Ge quantum dot photodetector | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2001 | A PMOS tunneling photodetector | CHEE-WEE LIU ; Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2004 | CMOS optoelectronics | CHEE-WEE LIU ; Liu, C.W.; Hsu, B.-C.; CHEE-WEE LIU | Electrochemical Society | | | |
2001 | A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes | Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W. | IEEE Transactions on Electron Devices | | | |
2003 | Growth and Electrical Characteristics of Liquid-Phase Deposited SiO2 on Ge | Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; Liu, C. W. | Electrochemical and Solid State Letters | | | |
2003 | Growth and electrical characteristics of liquid-phase deposited SiO<inf>2</inf> on Ge | CHEE-WEE LIU ; Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | | | |
2003 | A High Efficient 820 nm MOS Ge Quantum Dot Photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. | IEEE Electron Device Letters | | | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | CHEE-WEE LIU ; Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2003 | Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Yuan, F.; Hsu, B.-C.; CHEE-WEE LIU | Solid-State Electronics | | | |
2004 | Novel MIS Ge-Si quantum-dot infrared photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S.T.; Chen, P.S.; CHEE-WEE LIU ; Lu, J.-H.; CHIEH-HSIUNG KUAN | IEEE Electron Device Letters | 21 | 21 | |
2004 | Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors | Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S. T.; Chen, P. S.; Liu, C. W.; Lu, J.-H.; Kuan, C. H. | IEEE Electron Device Letters | | | |
2001 | Novel photodetectors using metal-oxide-silicon tunneling structures | CHEE-WEE LIU ; Hsu, B.-C.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | | | |
2002 | Oxide roughness effect on tunneling current of MOS diodes | CHEE-WEE LIU ; Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2002 | Oxide roughness effect on tunneling current of MOS diodes | Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W. | IEEE Transactions on Electron Devices | | | |
2001 | Oxide roughness enhanced reliability of MOS tunneling diodes | CHEE-WEE LIU ; Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | | | |
2001 | A PMOS Tunneling Photodetector | Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H. | IEEE Transactions on Electron Devices | | | |
2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | CHEE-WEE LIU ; Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | | | |
2004 | Recessed Oxynitride Dots on Self-Assembled Ge Quantum Dots Grown by LPD | Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P. S.; Liu, C. W. | Electrochemical and Solid-State Letters | | | |
2008 | Recovery of chromate from spent plating solutions by two-stage nanofiltration processes | Chen, S.-S.; Hsu, B.-C.; CHUN-HAN KO ; Chuang, P.-C. | Desalination | | | |