| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2001 | A comprehensive study of inversion current in MOS tunneling diodes | Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 35 | 33 | |
| 2001 | A novel illuminator design in a rapid thermal processor | Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Semiconductor Manufacturing | 6 | 0 | |
| 2005 | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 19 | 20 | |
| 2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU | Proceedings of the Electrochemical Society | | | |
| 2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H. | Electrochemical Society | 5 | | |
| 2001 | Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes | Chen, M.-J.; Lin, C.-F.; Lee, M.H.; Chang, S.T.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN | Applied Physics Letters | 10 | 10 | |
| 2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | Maikap, S.; Lee, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 26 | 26 | |
| 2003 | Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs | Lee, M.H.; CHEE-WEE LIU et al. | International Electron Devices Meeting | | | |
| 2001 | A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes | Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W. | IEEE Transactions on Electron Devices | | |  |
| 2014 | Concomitant charge-density-wave and unit-cell-doubling structural transitions in Dy5Ir4Si10 | Lee, M.H.; Chen, C.H.; Tseng, C.M.; Lue, C.S.; Kuo, Y.K.; Yang, H.D.; Chu, M.-W. | Physical Review B - Condensed Matter and Materials Physics | 6 | 7 | |
| 2001 | Correlation between Si-H/D bond desorption and injected electron energy in metal-oxide-silicon tunneling diodes | Lin, C.-H.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 10 | 8 | |
| 2009 | The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics | Lee, M.H.; Chang, S.T.; Weng, S.-C.; Liu, W.-H.; Chen, K.-J.; Ho, K.-Y.; Liao, M.H.; Huang, J.-J.; Hu, G.-R.; MING-HAN LIAO | IEEE International Reliability Physics Symposium Proceedings | 0 | 0 | |
| 1998 | The design of rapid thermal process for large diameter applications [semiconductor wafer processing] | Liu, C.W.; Lee, M.H.; Chao, C.Y.; Chen, C.Y.; Yang, C.C.; Chang, Y.; CHEE-WEE LIU ; CHIH-CHUNG YANG | Semiconductor Manufacturing Technology Workshop | 0 | 0 | |
| 2004 | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W. | Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the | | | |
| 2004 | Electrical and optical reliability improvement of HfO<inf>2</inf> gate dielectric by deuterium and hydrogen incorporation | Yu, C.-Y.; Chen, T.C.; Lee, M.H.; Huang, S.-H.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
| 2000 | Electroluminescence at si band gap energy based on metal-oxide-silicon structures | Lin, C.-F.; Liu, C.W.; Chen, M.-J.; Lee, M.H.; Lin, I.C.; MIIN-JANG CHEN | Journal of Applied Physics | 41 | 38 | |
| 2000 | Electroluminescence at si band gap energy based on metal-oxide-silicon structures | Lin, C.-F.; Liu, C.W.; Chen, M.-J.; Lee, M.H.; Lin, I.C.; CHEE-WEE LIU | Journal of Applied Physics | | | |
| 2000 | Electroluminescence at si band gap energy based on metal-oxide-silicon structures | Lin, C.-F.; Liu, C.W.; Chen, M.-J.; Lee, M.H.; Lin, I.C.; CHING-FUH LIN | Journal of Applied Physics | | | |
| 2005 | Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate | Yeo, Chia Ching; Cho, Byung Jin; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W. | IEEE Electron Device Letters | | | |
| 2005 | Electron mobility enhancement using ultrathin pure Ge on Si substrate | Yeo, C.C.; Cho, B.J.; Gao, F.; Lee, S.J.; Lee, M.H.; Yu, C.-Y.; Liu, C.W.; Tang, L.J.; Lee, T.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 53 | 40 | |
