公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | C-V and G-V characterisation of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN capacitor with low interface state density | Lay, T.S.; Liu, W.D.; MINGHWEI HONG ; Kwo, J.; Mannaerts, J.P. | Electronics Letters | | | |
2000 | Characteristics of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface: Structures and compositions | MINGHWEI HONG ; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Lu, Z.H.; Hsieh, K.C.; Cheng, K.Y. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al<inf>2</inf>O<inf>3</inf> buffer layer | Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; MINGHWEI HONG ; Kwo, J. | Journal of Physics D: Applied Physics | 15 | 16 | |
2012 | Correlation between oxygen vacancies and magnetism in Mn-doped Y <inf>2</inf> O <inf>3</inf> nanocrystals investigated by defect engineering techniques | Wu, T.S.; Chen, Y.C.; Shiu, Y.F.; Peng, H.J.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Hsu, C.W.; Chou, L.J.; Pao, C.W.; Lee, J.F.; Kwo, J.; MINGHWEI HONG ; Soo, Y.L. | Applied Physics Letters | | | |
2007 | Cubic HfO<inf>2</inf> doped with y<inf>2</inf>O<inf>2</inf> epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; MINGHWEI HONG ; Hsu, C.-H.; Kwo, J. | Applied Physics Letters | | | |
2010 | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Lin, T.D.; Chang, P.; Chiu, H.C.; MINGHWEI HONG ; Kwo, J.; Lin, Y.S.; Hsu, S.S.H. | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | | | |
2011 | Defect density reduction of the Al<inf>2</inf>O<inf>3</inf>/GaAs(001) interface by using H<inf>2</inf>S molecular beam passivation | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; MINGHWEI HONG ; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. | Surface Science | | | |
2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | MINGHWEI HONG ; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y. | Thin Solid Films | | | |
1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; MINGHWEI HONG ; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y. | Solid-State Electronics | | | |
2016 | Demonstration of large field effect in topological insulator films via a high-庥 back gate | Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | | | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis | Wang, Y.C.; MINGHWEI HONG ; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y. | IEEE Electron Device Letters | | | |
2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; MINGHWEI HONG ; Kwo, J. | Journal of Crystal Growth | | | |
2005 | Depth profiling the electronic structures at HfO<inf>2</inf>/Si interface grown by molecular beam epitaxy | Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2005 | Depth-profile study of the electronic structures at Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) and Gd<inf>2</inf>O<inf>3</inf>-GaN interfaces by X-ray photoelectron spectroscopy | Lay, T.S.; Liao, Y.Y.; Hung, W.H.; MINGHWEI HONG ; Kwo, J.; Mannaerts, J.P. | Journal of Crystal Growth | | | |
2011 | Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M. | Applied Physics Letters | 2 | 3 | |
2011 | Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; MINGHWEI HONG ; Kwo, J.; Chang, Y.-M. | Applied Physics Letters | | | |
2009 | Domain matching epitaxial growth of high-quality ZnO film using a Y <inf>2</inf>O<inf>3</inf> buffer layer on Si (111) | Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Lee, Y.J.; MINGHWEI HONG ; Kwo, J. | Crystal Growth and Design | | | |
2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric | Chang, Y.C.; Chang, W.H.; Chang, Y.H.; Kwo, J.; Lin, Y.S.; Hsu, S.H.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | Microelectronic Engineering | | | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | | | |