公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Imapct of SiN on performance in novel CMOS architecture using substrate strained-SiGe and mechanical strained-si technology | CHEE-WEE LIU ; Lin, Y.M.; Wu, S.L.; Chang, S.J.; Chen, P.S.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | | | |
2001 | Improved optimal aim strategy based multiple TCSC controllers for transient stability control of interconnected power system | CHEE-WEE LIU ; Yu, C.-S.; Liu, C.-W.; Jiang, J.-A.; CHEE-WEE LIU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
2009 | Improved SPICE macromodel of phase change random access memory | CHEE-WEE LIU ; Chang, H.-L.; Chang, H.-C.; Yang, S.-C.; Tsai, H.-C.; Li, H.-C.; CHEE-WEE LIU | 2009 International Symposium on VLSI Design, Automation and Test | | | |
2013 | Improvement in electrical characteristics of HfO <inf>2</inf> gate dielectrics treated by remote NH <inf>3</inf> plasma | Huang, L.-T.; Chang, M.-L.; Huang, J.-J.; Lin, H.-C. ; Kuo, C.-L. ; Lee, M.-H.; CHEE-WEE LIU ; MIIN-JANG CHEN | Applied Surface Science | 11 | 11 | |
2004 | Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer | CHEE-WEE LIU ; Chen, P.S.; Lee, S.W.; Peng, Y.H.; Liu, C.W.; Tsai, M.-J.; CHEE-WEE LIU | Physica Status Solidi (B) Basic Research | | | |
2015 | In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2017 | Indication of band flattening at the Fermi level in a strongly correlated electron system | Melnikov M.Y; Shashkin A.A; Dolgopolov V.T; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Scientific Reports | 22 | 22 | |
2011 | Influence of defects and interface on radiative transition of Ge | CHEE-WEE LIU ; Jan, S.-R.; Chen, C.-Y.; Lee, C.-H.; Chan, S.-T.; Peng, K.-L.; Liu, C.W.; Yamamoto, Y.; Tillack, B.; CHEE-WEE LIU | Applied Physics Letters | | | |
2012 | Influence of surface roughness and interfacial layer on the infrared spectra of V-CVD grown 3C-SiC/Si (100) epilayers | CHEE-WEE LIU ; Talwar, D.N.; Feng, Z.C.; Liu, C.W.; Tin, C.-C.; CHEE-WEE LIU | Semiconductor Science and Technology | | | |
2000 | Infrared electroluminescence from metal-oxide-semiconductor structures on silicon | Lin, Ching-Fuh ; Liu, C. W.; Chen, Miin-Jang ; Lee, M. H.; CHEE-WEE LIU | Journal of Physics: Condensed Matter | 7 | 7 | |
2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | MING-HAN LIAO ; Cheng, T.-H.; CHEE-WEE LIU | Applied Physics Letters | 29 | 31 | |
2020 | Infrared Response of Stacked GeSn Transistors | Liu, H.-H.; Huang, Y.-S.; Lu, F.-L.; Ye, H.-Y.; Liu, C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | | | |
2000 | Infrared studies of laser induced oxide on (1 0 0) Si and SiGe layers | CHEE-WEE LIU ; Huang, Y.S.; Chen, C.Y.; Gurtler, S.; CHIH-CHUNG YANG ; Chang, Y.; Chen, L.P. | Materials Chemistry and Physics | 2 | 2 | |
2010 | Insulating halos to boost planar NMOSFET performance | CHEE-WEE LIU ; Hsu, W.-W.; Lai, C.-Y.; Liu, C.W.; Ko, C.-H.; Kuan, T.-M.; Wang, T.-J.; Lee, W.-C.; Wann, C.H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2003 | Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity | CHEE-WEE LIU ; Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | | | |
2010 | Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure | CHEE-WEE LIU ; Lu, T.M.; Lee, C.-H.; Tsui, D.C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2017 | Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack | Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2013 | Interfacial layer reduction and high permittivity tetragonal ZrO 2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness | CHEE-WEE LIU ; Lin, C.-M.; Chang, H.-C.; Wong, I.-H.; Luo, S.-J.; Liu, C.W.; Hu, C.; CHEE-WEE LIU | Applied Physics Letters | | | |
2012 | Interfacial layer-free ZrO<inf>2</inf> on Ge with 0.39-nm EOT, κ?43, ?2×10<sup>-3</sup> A/cm<sup>2</sup> gate leakage, SS =85 mV/dec, I<inf>on</inf>/I<inf>off</inf> =6×10<sup>5</sup>, and high strain response | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |