公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides | Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 37 | 35 | |
1989 | Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices | Hwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 0 | 0 | |
1987 | Constant peak field distribution and voltage dropping in the oxide layer of a MOS capacitor during charge-temperature aging | JENN-GWO HWU | International Journal of Electronics | 0 | 0 | |
2014 | Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | Thin Solid Films | 1 | 1 | |
2014 | Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | Solid-State Electronics | 5 | 5 | |
2016 | Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2016 (Invited Talk) | | | |
2016 | Coupling Effect between Nanoscale Oxide MOS Tunneling Diodes | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2016 (Invited Talk) | | | |
2020 | Coupling sensitivity in concentric metal-insulator-semiconductor tunnel diodes by controlling the lateral injection electrons | Chen, K.-C.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 1 | 1 | |
2016 | Current Coupling Effect in MIS Tunnel Diode with Coupled Open-Gated MIS Structure | C.S.Liao; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 11 | 0 | |
2023 | Current Polarity Changeable Concentric MIS Tunnel Photodiode With Linear Photodetectivity via Inner Gate Biasing and Outer Ring Short-Circuit Operation | Lin, Yu Cin; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | | |
2001 | Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress | Hong, C.-C.; JENN-GWO HWU | Applied Physics Letters | 17 | 18 | |
1992 | Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method | Lin, Jing-Jenn; Lin, Kuan-Chin; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2 | 3 | |
2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
1994 | Design and Fabrication of Basic Silicon MOS Digital Ciruits | Hwu, Jenn-Gwo | | | | |
2012 | Detrapping characteristics of an Al 2O 3/SiO 2/4H-SiC stacked structure with two-state trap-assisted tunnelling current behaviour | JENN-GWO HWU | Journal of Physics D: Applied Physics | 2 | 2 | |
2015 | The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films | Liao, C.-S.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
1987 | Direct Indication of Interface Trap States in an Mos Capacitor From the Peaks of Optical illumination-induced Capacitances | JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
1986 | Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique | Hwu, J.G.; Wang, W.S.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 10 | 9 | |
2017 | Double Exponential Mechanism Controlled Transistor | Jenn-Gwo Hwu; Samuel C. Pan; Chien-Shun Liao; JENN-GWO HWU | | | | |