Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Cui, S.; Ma, T.P. | Applied Physics Letters | | | |
2008 | High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Tsai, W.; Wang, Y.C. | Applied Physics Letters | 142 | 123 | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; MINGHWEI HONG | ECS Transactions | | | |
2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | | | |
2002 | Porous biodegradable polymer scaffolds for cartilage tissue engineering | Lin, Y.-J.; Liao, C.-J.; Chen, C.-F.; Tsai, W.; WEI-BOR TSAI | Third Smith and Nephew International Symposium - Translating Tissue Engineering into Products | | | |
2009 | Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics | Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications | | | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectrics | Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Device Research Conference | 14 | 0 | |
2009 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | | | |
2015 | Stem-Cell Responses to Surface Nanotopographies | Wang, P.; Tsai, W.; WEI-BOR TSAI | Stem Cell Nanoengineering | | | |
2005 | Structural characterization and catalytic activities of copper complexes with pyridine-amine-phosphine-oxide ligand | Tsai, W.; Liu, Y.-H.; SHIE-MING PENG ; SHIUH-TZUNG LIU | Journal of Organometallic Chemistry | 22 | 21 | |