Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2007 | HfO<inf>2</inf>/HfAlO/HfO<inf>2</inf> nanolaminate charge trapping layers for high-performance nonvolatile memory device applications | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | |||
2008 | Highly thermally stable and reproducible of ALD RuO<inf>2</inf> nanocrystal floating gate memory devices with large memory window and good retention | Maikap, S.; Banerjee, W.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Kao, M.-J.; Tsai, M.-J.; JER-REN YANG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | |||
2008 | Low voltage operation of high-�e HfO<inf>2</inf>/TiO <inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> single quantum well for nanoscale flash memory device applications | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics | |||
2008 | Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Electrochemical and Solid-State Letters |