Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2008 | Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters | Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y. | Applied Physics Letters | 117 | 101 | |
2001 | C-V and G-V characterisation of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN capacitor with low interface state density | Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 14 | 14 | |
2005 | Depth profiling the electronic structures at HfO<inf>2</inf>/Si interface grown by molecular beam epitaxy | Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 6 | |
2005 | Depth-profile study of the electronic structures at Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) and Gd<inf>2</inf>O<inf>3</inf>-GaN interfaces by X-ray photoelectron spectroscopy | Lay, T.S.; Liao, Y.Y.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2002 | Electrical characteristics of ultrathin Pt/Y<inf>2</inf>O<inf>3</inf>/Si capacitor with rapid post-metallisation annealing | Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 0 | 0 | |
2001 | Energy-band parameters at the GaAs- and GaN-Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) interfaces | Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG | Solid-State Electronics | 83 | 81 | |
1998 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a dielectric insulator for GaAs device applications | Lay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
2001 | Probing the microscopic compositions at Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaAs interface by core level photoelectron spectroscopy | Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 11 | 11 | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |
2003 | Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitor | Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 9 | | |
2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG | Journal of Applied Physics | 34 | 32 | |
2007 | The study of temperature dependence of photoresponse in superlattice infrared photodetectors | CHIEH-HSIUNG KUAN ; Lu, J.H.; Wang, Y.C.; Wang, C.L.; Kuan, C.H.; Yang, C.W.; Tu, S.L.; Feng, J.Y.; Lay, T.S.; CHIEH-HSIUNG KUAN | Journal of Applied Physics | | | |