| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2008 | Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor | Liao, M.H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 13 | 11 | |
| 2016 | Ge1-xSix on Ge-Based N-Type Metal-Oxide Semiconductor Field-Effect Transistors by Device Simulation Combined with High-Order StressPiezoresistive Relationships | M. H.Liao ; C.-C. Lee; C.-P. Hsieh; P.-C. Huang; S.-W. Cheng | Thin Solid Films | | | |
| 2016 | Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships | Lee, C.-C.; Hsieh, C.-P.; Huang, P.-C.; Cheng, S.-W.; Liao, M.-H.; MING-HAN LIAO | Thin Solid Films | 3 | 2 | |
| 2017 | Green energy computing of heterojunction with intrinsic thin layer (HIT) solar cell by CAD (Computer aided design) | Lee, M.H.; Liao, M.H. ; Tai, C.-W.; Chang, S.T. | Future Technologies Conference | 0 | 0 | |
| 2010 | High efficient Si nano-textured light-emitting diodes and solar cells with obvious photonic crystal effect | Liao, M.H.; Wang, W.-C.; Tsai, H.R.; Chang, S.T.; MING-HAN LIAO | IEEE Photovoltaic Specialists Conference | 0 | 0 | |
| 2015 | The high performance Ge Metal-Oxide-Semiconductor Field-Effect Transistor with the magnetic metal gate | M. H.Liao ; S.-C. Huangn; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | | | |
| 2014 | High κ/InGaAs for ultimate CMOS - Interfacial passivation, low ohmic contacts, and device performance (Invited) | Chang, W.H.; Lin, T.D.; Liao, M.H. ; Pi, T.W.; Kwo, J.; Hong, M. | ECS Transactions | 1 | 0 | |
| 2011 | High-efficient Si nanotextured light-emitting diodes and solar cells with obvious photonic crystal effect | Han Liao, M.; MING-HAN LIAO | IEEE Transactions on Nanotechnology | 3 | 4 | |
| 2013 | Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | M. H.Liao ; C.-H. Chen | AIP Advances | | | |
| 2013 | Improved Si<inf>0.5</inf>Ge<inf>0.5</inf>/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy | Liao, M.-H.; Chen, C.-H.; MING-HAN LIAO | AIP Advances | 0 | 0 | |
| 2019 | Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<inf>2</inf> Capacitor with Molybdenum Capping Electrode | Chen, K.-T.; Liao, C.-Y.; Lo, C.; Chen, H.-Y.; Siang, G.-Y.; Liu, S.; Chang, S.-C.; Liao, M.-H.; Chang, S.-T.; Lee, M.H.; MING-HAN LIAO | 2019 Electron Devices Technology and Manufacturing Conference | 11 | 0 | |
| 2014 | The improving Si <inf>0.5</inf> Ge <inf>0.5</inf> /Si interface quality through a low energy hydrogen plasma cleaning process and positron annihilation spectroscopy | Hsieh, C.-F.; Chen, C.-W.; Chen, C.-H.; Liao, M.-H. | International Journal of Automation and Smart Technology | 0 | 0 | |
| 2017 | In <inf>0.18</inf> Al <inf>0.82</inf> N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; MING-HAN LIAO ; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
| 2021 | In-Sn-Zn oxide nanocomposite films with enhanced electrical properties deposited by high-power impulse magnetron sputtering | Sun H; Li Z.-Y; Chen S.-C; Liao M.-H; Gong J.-H; Bai Z; Wang W.-X.; MING-HAN LIAO | Nanomaterials | 2 | 2 | |
| 2017 | In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics | M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee | Solid State Electronics | | | |
| 2017 | In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact | Chen, P.-G.; Tang, M.; Liao, M.-H.; Lee, M.H.; MING-HAN LIAO | Solid-State Electronics | 5 | 5 | |
| 2019 | Influence of sputtering power on the electrical properties of In-Sn-Zn oxide thin films deposited by high power impulse magnetron sputtering | Li, Z.-Y.; Chen, S.-C.; Huo, Q.-H.; Liao, M.-H.; Dai, M.-J.; Lin, S.-S.; Yang, T.-L.; Sun, H.; MING-HAN LIAO | Coatings | 4 | 5 | |
| 2006 | Infrared emission from Ge metal-insulator-semiconductor tunneling diodes | Liao, M.H.; Cheng, T.-H.; CHEE-WEE LIU ; MING-HAN LIAO | Applied Physics Letters | 29 | 31 | |
| 2006 | Infrared emission from Ge metsl-isulator-semiconductor tunneling diodes | M. H. Liao; T.-H. Cheng; C. W. Liu; MING-HAN LIAO | Appl. Phys. Lett., | | | |
| 2007 | The intermixing and strain effects on electroluminescence of SiGe dots | Liao, M.H.; Lee, C.-H.; Hung, T.A.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 29 | 29 | |
