Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; MINGHWEI HONG | Journal of Crystal Growth | | | |
2009 | High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric | Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; MINGHWEI HONG | Device Research Conference, 2009 | | | |
2008 | High-performance self-aligned inversion-channel In 0.53 Ga 0.47 As metal-oxide-semiconductor field-effect-transistor with Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Tung, LT; Chen, CP; MINGHWEI HONG ; Kwo, J; Tsai, W; Wang, YC | Applied Physics Letters | | | |
2005 | High-quality nanothickness single-crystal Sc2O3 film grown on Si (111) | MINGHWEI HONG ; Kortan, AR; Chang, P; Huang, YL; Chen, CP; Chou, HY; Lee, HY; Kwo, J; Chu, M-W; Chen, CH; others | Applied Physics Letters | | | |
2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; MINGHWEI HONG ; Kwo, J | Microelectronic Engineering | | | |
2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; MINGHWEI HONG | APS Meeting Abstracts | | | |
2011 | InGaAs and Ge MOSFETs with high $κ$ dielectrics | Lee, WC; Chang, P; Lin, TD; Chu, LK; Chiu, HC; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3 (Gd2O3) as a gate dielectric | Lin, TD; Chiu, HC; Chang, P; Lee, WC; Chiang, TH; Kwo, JR; Tsai, W; MINGHWEI HONG | ECS Transactions | | | |
2010 | InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-k dielectrics for science and technology beyond Si CMOS | MINGHWEI HONG ; Kwo, J; Lin, TD; Huang, ML; Lee, WC; Chang, P | Fundamentals of III-V Semiconductor MOSFETs | | | |
2011 | Magnetization reversal processes of epitaxial Fe3Si films on GaAs (001) | Liu, YC; Chang, P; Huang, SY; Chang, LJ; Lin, WC; Lee, SF; MINGHWEI HONG ; Kwo, J | Journal of Applied Physics | | | |
2012 | Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy | Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |
2011 | MBE—Enabling technology beyond Si CMOS | Chang, P; Lee, WC; Lin, TD; Hsu, CH; Kwo, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
2008 | Oxide scalability in Al [sub 2] O [sub 3]/Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/In [sub 0.20] Ga [sub 0.80] As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures | | | |
2008 | Oxide scalability in Al2O3/Ga2O3 (Gd2O3)/In0. 20Ga0. 80As/GaAs heterostructures | Shiu, KH; Chiang, CH; Lee, YJ; Lee, WC; Chang, P; Tung, LT; MINGHWEI HONG ; Kwo, J; Tsai, W | Journal of Vacuum Science & Technology B | | | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2O3/HfO2 and HfAlO/HfO2 | Chang, P; Lee, WC; Huang, ML; Lee, YJ; MINGHWEI HONG ; Kwo, J | Journal of vacuum science & technology. B, Microelectronics and nanometer structures | | | |
2009 | Self-aligned inversion channel In 0.53 Ga 0.47 As n-MOSFETs with ALD-Al 2 O 3 and MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) as gate dielectrics | Chiu, HC; Lin, TD; Chang, P; Lee, WC; Chiang, CH; Kwo, J; Lin, YS; Hsu, Shawn SH; Tsai, W; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2010 | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Wu, YD; MINGHWEI HONG ; Kwo, J | Solid-State Electronics | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2011 | Strong crystal anisotropy of magneto-transport property in Fe 3 Si epitaxial film | Hung, HY; Huang, SY; Chang, P; Lin, WC; Liu, YC; Lee, SF; MINGHWEI HONG ; Kwo, J | Journal of Crystal Growth | | | |
2010 | Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films | Huang, SY; Hung, HY; Chang, P; Lin, WC; Lee, SF; MINGHWEI HONG ; Kwo, J | APS Meeting Abstracts | | | |